Layout styles to improve CDM ESD robustness of integrated circuits in 65-nm CMOS process

Ming Dou Ker, Chun-Yu Lin, Tang Long Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Due to the thinner gate oxide in the nanoscale CMOS technology and the larger chip size in the system-on-chip (SoC) IC products, the charged-device-model (CDM) electrostatic discharge (ESD) has become the major ESD events to cause failures during IC manufacturing procedures. The effective ESD protection design against CDM ESD stresses should be implemented into the chip with layout optimization to improve its ESD robustness. In this work, the impacts of different layout styles of MOS devices on CDM ESD robustness were investigated in a 65-nm CMOS process. The experimental results can provide useful information to optimize the layout of integrated circuits against CDM ESD events.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011
Pages374-377
Number of pages4
DOIs
Publication statusPublished - 2011 Jun 28
Event2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011 - Hsinchu, Taiwan
Duration: 2011 Apr 252011 Apr 28

Other

Other2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011
CountryTaiwan
CityHsinchu
Period11/4/2511/4/28

Fingerprint

Electrostatic discharge
Integrated circuits
MOS devices
Oxides

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ker, M. D., Lin, C-Y., & Chang, T. L. (2011). Layout styles to improve CDM ESD robustness of integrated circuits in 65-nm CMOS process. In Proceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011 (pp. 374-377). [5783551] https://doi.org/10.1109/VDAT.2011.5783551

Layout styles to improve CDM ESD robustness of integrated circuits in 65-nm CMOS process. / Ker, Ming Dou; Lin, Chun-Yu; Chang, Tang Long.

Proceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011. 2011. p. 374-377 5783551.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ker, MD, Lin, C-Y & Chang, TL 2011, Layout styles to improve CDM ESD robustness of integrated circuits in 65-nm CMOS process. in Proceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011., 5783551, pp. 374-377, 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011, Hsinchu, Taiwan, 11/4/25. https://doi.org/10.1109/VDAT.2011.5783551
Ker MD, Lin C-Y, Chang TL. Layout styles to improve CDM ESD robustness of integrated circuits in 65-nm CMOS process. In Proceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011. 2011. p. 374-377. 5783551 https://doi.org/10.1109/VDAT.2011.5783551
Ker, Ming Dou ; Lin, Chun-Yu ; Chang, Tang Long. / Layout styles to improve CDM ESD robustness of integrated circuits in 65-nm CMOS process. Proceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011. 2011. pp. 374-377
@inproceedings{a8f0aedb8abf4edb96c74e5df406930d,
title = "Layout styles to improve CDM ESD robustness of integrated circuits in 65-nm CMOS process",
abstract = "Due to the thinner gate oxide in the nanoscale CMOS technology and the larger chip size in the system-on-chip (SoC) IC products, the charged-device-model (CDM) electrostatic discharge (ESD) has become the major ESD events to cause failures during IC manufacturing procedures. The effective ESD protection design against CDM ESD stresses should be implemented into the chip with layout optimization to improve its ESD robustness. In this work, the impacts of different layout styles of MOS devices on CDM ESD robustness were investigated in a 65-nm CMOS process. The experimental results can provide useful information to optimize the layout of integrated circuits against CDM ESD events.",
author = "Ker, {Ming Dou} and Chun-Yu Lin and Chang, {Tang Long}",
year = "2011",
month = "6",
day = "28",
doi = "10.1109/VDAT.2011.5783551",
language = "English",
isbn = "9781424484997",
pages = "374--377",
booktitle = "Proceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011",

}

TY - GEN

T1 - Layout styles to improve CDM ESD robustness of integrated circuits in 65-nm CMOS process

AU - Ker, Ming Dou

AU - Lin, Chun-Yu

AU - Chang, Tang Long

PY - 2011/6/28

Y1 - 2011/6/28

N2 - Due to the thinner gate oxide in the nanoscale CMOS technology and the larger chip size in the system-on-chip (SoC) IC products, the charged-device-model (CDM) electrostatic discharge (ESD) has become the major ESD events to cause failures during IC manufacturing procedures. The effective ESD protection design against CDM ESD stresses should be implemented into the chip with layout optimization to improve its ESD robustness. In this work, the impacts of different layout styles of MOS devices on CDM ESD robustness were investigated in a 65-nm CMOS process. The experimental results can provide useful information to optimize the layout of integrated circuits against CDM ESD events.

AB - Due to the thinner gate oxide in the nanoscale CMOS technology and the larger chip size in the system-on-chip (SoC) IC products, the charged-device-model (CDM) electrostatic discharge (ESD) has become the major ESD events to cause failures during IC manufacturing procedures. The effective ESD protection design against CDM ESD stresses should be implemented into the chip with layout optimization to improve its ESD robustness. In this work, the impacts of different layout styles of MOS devices on CDM ESD robustness were investigated in a 65-nm CMOS process. The experimental results can provide useful information to optimize the layout of integrated circuits against CDM ESD events.

UR - http://www.scopus.com/inward/record.url?scp=79959503673&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959503673&partnerID=8YFLogxK

U2 - 10.1109/VDAT.2011.5783551

DO - 10.1109/VDAT.2011.5783551

M3 - Conference contribution

AN - SCOPUS:79959503673

SN - 9781424484997

SP - 374

EP - 377

BT - Proceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011

ER -