Laser-induced desorption for patterning photo luminance in C60/MoS2 heterostructure

Chuan Che Hsu, Kang Yao Ma, Che Ming Liu, Chien Chen Hsu, Yann Wen Lan, Wen Chin Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


In this study, C60 coverage was deposited on few-layer MoS2 flakes, the results of which were analyzed by investigating the morphology and performing Raman spectroscopy and photoluminescence (PL) spectroscopy. The surface roughness of 5 nm C60/MoS2 was ±1 nm. When the thickness of the C60 was increased to 9–20 nm, the roughness saturated at ±2 nm and did not advance further. The added presence of C60 on MoS2 did not cause observable changes in the Raman spectra, indicating that the van der Waals contact between C60 and MoS2 is weak and does not induce noticeable microstructural changes. When the C60 coverage increased, the PL peaks occurred at the C60-dominated 1.69 eV rather than at the original MoS2-dominated 1.83 eV. Furthermore, continuous wave (CW) laser-induced local desorption was revealed in the C60/MoS2 heterostructure. A laser power of 10 mW/μm2 was sufficient for 20 nm thick C60 to desorb from a MoS2 flake and could be used to create designed patterns with a resolution of approximately 500 nm. A patterned PL could also be achieved in the C60/MoS2 through CW laser-induced desorption of C60. This method can be applied in the future fabrication of functional nanodevices combining 0-dimensional and 2-dimensional materials.

Original languageEnglish
Article number102241
JournalSurfaces and Interfaces
Publication statusPublished - 2022 Oct


  • Heterostructure
  • Semiconductor
  • Two-dimensional material

ASJC Scopus subject areas

  • Surfaces, Coatings and Films


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