Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

Chun Yu Lin; Shiang Yu Tsai; Li Wei Chu; Ming Dou Ker

doi:10.1109/TMTT.2012.2231426

Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

Chun Yu Lin^*
, Shiang Yu Tsai
, Li Wei Chu
, Ming Dou Ker

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

Original language	English
Article number	6381493
Pages (from-to)	914-921
Number of pages	8
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	61
Issue number	2
DOIs	https://doi.org/10.1109/TMTT.2012.2231426
Publication status	Published - 2013
Externally published	Yes

Keywords

Electrostatic discharge (ESD)
power amplifier (PA)
radio-frequency (RF)
silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/TMTT.2012.2231426

Cite this

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title = "Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process",

abstract = "The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.",

keywords = "Electrostatic discharge (ESD), power amplifier (PA), radio-frequency (RF), silicon-controlled rectifier (SCR)",

author = "Lin, \{Chun Yu\} and Tsai, \{Shiang Yu\} and Chu, \{Li Wei\} and Ker, \{Ming Dou\}",

year = "2013",

doi = "10.1109/TMTT.2012.2231426",

language = "English",

volume = "61",

pages = "914--921",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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T1 - Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

AU - Lin, Chun Yu

AU - Tsai, Shiang Yu

AU - Chu, Li Wei

AU - Ker, Ming Dou

PY - 2013

Y1 - 2013

N2 - The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

AB - The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

KW - Electrostatic discharge (ESD)

KW - power amplifier (PA)

KW - radio-frequency (RF)

KW - silicon-controlled rectifier (SCR)

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U2 - 10.1109/TMTT.2012.2231426

DO - 10.1109/TMTT.2012.2231426

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JO - IEEE Transactions on Microwave Theory and Techniques

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ER -

Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

Abstract

Keywords

ASJC Scopus subject areas

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