Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

Chun Yu Lin, Shiang Yu Tsai, Li Wei Chu, Ming Dou Ker

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

Original languageEnglish
Article number6381493
Pages (from-to)914-921
Number of pages8
JournalIEEE Transactions on Microwave Theory and Techniques
Volume61
Issue number2
DOIs
Publication statusPublished - 2013 Jan 1

Keywords

  • Electrostatic discharge (ESD)
  • power amplifier (PA)
  • radio-frequency (RF)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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