Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

Chun-Yu Lin, Shiang Yu Tsai, Li Wei Chu, Ming Dou Ker

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

Original languageEnglish
Article number6381493
Pages (from-to)914-921
Number of pages8
JournalIEEE Transactions on Microwave Theory and Techniques
Volume61
Issue number2
DOIs
Publication statusPublished - 2013 Jan 1

Fingerprint

circuit protection
Electrostatic discharge
power amplifiers
Power amplifiers
CMOS
electrostatics
Networks (circuits)
radio frequencies
Radio frequency amplifiers
immunity
human body
Capacitance
capacitance
damage
output
Electric potential
electric potential

Keywords

  • Electrostatic discharge (ESD)
  • power amplifier (PA)
  • radio-frequency (RF)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process. / Lin, Chun-Yu; Tsai, Shiang Yu; Chu, Li Wei; Ker, Ming Dou.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 61, No. 2, 6381493, 01.01.2013, p. 914-921.

Research output: Contribution to journalArticle

@article{b01bdcde35254bb994851ba8bb72da69,
title = "Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process",
abstract = "The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.",
keywords = "Electrostatic discharge (ESD), power amplifier (PA), radio-frequency (RF), silicon-controlled rectifier (SCR)",
author = "Chun-Yu Lin and Tsai, {Shiang Yu} and Chu, {Li Wei} and Ker, {Ming Dou}",
year = "2013",
month = "1",
day = "1",
doi = "10.1109/TMTT.2012.2231426",
language = "English",
volume = "61",
pages = "914--921",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

AU - Lin, Chun-Yu

AU - Tsai, Shiang Yu

AU - Chu, Li Wei

AU - Ker, Ming Dou

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

AB - The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

KW - Electrostatic discharge (ESD)

KW - power amplifier (PA)

KW - radio-frequency (RF)

KW - silicon-controlled rectifier (SCR)

UR - http://www.scopus.com/inward/record.url?scp=84873414463&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873414463&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2012.2231426

DO - 10.1109/TMTT.2012.2231426

M3 - Article

AN - SCOPUS:84873414463

VL - 61

SP - 914

EP - 921

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 2

M1 - 6381493

ER -