Abstract
A method is described for obtaining large quantities of high-purity crystalline GaN nanowires through vapor-liquid-solid (VLS) growth using indium metal as a catalyst. The resulting nanowires have a preferred growth direction. The strong photoluminescence of the nanowires in the UV region suggests possible applications in nanotechnological optoelectronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 738-741 |
| Number of pages | 4 |
| Journal | Advanced Materials |
| Volume | 12 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2000 |
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
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