Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors

C. H. Cheng; C. K. Deng; H. H. Hsu; P. C. Chen; B. H. Liou; Albert Chin; F. S. Yeh

doi:10.1149/1.3439668

Lanthanide-oxides mixed TiO₂ dielectrics for high-κ MIM capacitors

C. H. Cheng
, C. K. Deng
, H. H. Hsu
, P. C. Chen
, B. H. Liou
, Albert Chin
, F. S. Yeh

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We proposed two lanthanide-oxide mixed TiO₂ dielectrics for metal-insulator-metal (MIM) capacitors using TiO₂ -LaAlO (TLAO) and TiO₂ -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m² with a low leakage current of 1.4× 10^-7 A/ cm² was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO₂ dielectrics with the introduction of LaAlO₃ and LaYO might be promising for MIM capacitors.

Original language	English
Pages (from-to)	H821-H824
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	8
DOIs	https://doi.org/10.1149/1.3439668
Publication status	Published - 2010
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

Access to Document

10.1149/1.3439668

Cite this

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title = "Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors",

abstract = "We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2 -LaAlO (TLAO) and TiO2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m2 with a low leakage current of 1.4{\texttimes} 10-7 A/ cm2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors.",

author = "Cheng, \{C. H.\} and Deng, \{C. K.\} and Hsu, \{H. H.\} and Chen, \{P. C.\} and Liou, \{B. H.\} and Albert Chin and Yeh, \{F. S.\}",

year = "2010",

doi = "10.1149/1.3439668",

language = "English",

volume = "157",

pages = "H821--H824",

journal = "Journal of the Electrochemical Society",

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TY - JOUR

T1 - Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors

AU - Cheng, C. H.

AU - Deng, C. K.

AU - Hsu, H. H.

AU - Chen, P. C.

AU - Liou, B. H.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2010

Y1 - 2010

N2 - We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2 -LaAlO (TLAO) and TiO2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m2 with a low leakage current of 1.4× 10-7 A/ cm2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors.

AB - We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2 -LaAlO (TLAO) and TiO2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m2 with a low leakage current of 1.4× 10-7 A/ cm2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors.

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VL - 157

SP - H821-H824

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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