Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors

C. H. Cheng, C. K. Deng, H. H. Hsu, P. C. Chen, B. H. Liou, Albert Chin, F. S. Yeh

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3 Citations (Scopus)

Abstract

We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2 -LaAlO (TLAO) and TiO2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m2 with a low leakage current of 1.4× 10-7 A/ cm2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors.

Original languageEnglish
Pages (from-to)H821-H824
JournalJournal of the Electrochemical Society
Volume157
Issue number8
DOIs
Publication statusPublished - 2010 Jul 23

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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    Cheng, C. H., Deng, C. K., Hsu, H. H., Chen, P. C., Liou, B. H., Chin, A., & Yeh, F. S. (2010). Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors. Journal of the Electrochemical Society, 157(8), H821-H824. https://doi.org/10.1149/1.3439668