Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors

C. H. Cheng, C. K. Deng, H. H. Hsu, P. C. Chen, B. H. Liou, Albert Chin, F. S. Yeh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2 -LaAlO (TLAO) and TiO2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m2 with a low leakage current of 1.4× 10-7 A/ cm2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors.

Original languageEnglish
Pages (from-to)H821-H824
JournalJournal of the Electrochemical Society
Volume157
Issue number8
DOIs
Publication statusPublished - 2010 Jul 23

Fingerprint

Lanthanoid Series Elements
mixed oxides
Rare earth elements
Oxides
capacitors
Capacitors
Metals
insulators
metals
leakage
Capacitance
capacitance
Semiconductor materials
Leakage currents
Electric properties
nonlinearity
electrical properties
analogs
requirements
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Cheng, C. H., Deng, C. K., Hsu, H. H., Chen, P. C., Liou, B. H., Chin, A., & Yeh, F. S. (2010). Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors. Journal of the Electrochemical Society, 157(8), H821-H824. https://doi.org/10.1149/1.3439668

Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors. / Cheng, C. H.; Deng, C. K.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.

In: Journal of the Electrochemical Society, Vol. 157, No. 8, 23.07.2010, p. H821-H824.

Research output: Contribution to journalArticle

Cheng, CH, Deng, CK, Hsu, HH, Chen, PC, Liou, BH, Chin, A & Yeh, FS 2010, 'Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors', Journal of the Electrochemical Society, vol. 157, no. 8, pp. H821-H824. https://doi.org/10.1149/1.3439668
Cheng, C. H. ; Deng, C. K. ; Hsu, H. H. ; Chen, P. C. ; Liou, B. H. ; Chin, Albert ; Yeh, F. S. / Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors. In: Journal of the Electrochemical Society. 2010 ; Vol. 157, No. 8. pp. H821-H824.
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