Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor

Hamed Alsuraisry, Shao Ting Yen, Jeng Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP1dB) 26 dBm and the power-added efficiency at OP1dB of 25.7%.

Original languageEnglish
Title of host publicationProceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages25-27
Number of pages3
ISBN (Electronic)9781509034635
DOIs
Publication statusPublished - 2017 Mar 2
Event2017 Topical Workshop on Internet of Space, TWIOS 2017 - Phoenix, United States
Duration: 2017 Jan 152017 Jan 18

Other

Other2017 Topical Workshop on Internet of Space, TWIOS 2017
CountryUnited States
CityPhoenix
Period17/1/1517/1/18

Keywords

  • CMOS
  • GaAs
  • Ka-band
  • power amplifier (PA)
  • satellite

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Aerospace Engineering
  • Instrumentation

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  • Cite this

    Alsuraisry, H., Yen, S. T., Tsai, J. H., & Huang, T. W. (2017). Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor. In Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017 (pp. 25-27). [7869771] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TWIOS.2017.7869771