Abstract
In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP1dB) 26 dBm and the power-added efficiency at OP1dB of 25.7%.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 25-27 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781509034635 |
| DOIs | |
| Publication status | Published - 2017 Mar 2 |
| Event | 2017 Topical Workshop on Internet of Space, TWIOS 2017 - Phoenix, United States Duration: 2017 Jan 15 → 2017 Jan 18 |
Other
| Other | 2017 Topical Workshop on Internet of Space, TWIOS 2017 |
|---|---|
| Country | United States |
| City | Phoenix |
| Period | 17/1/15 → 17/1/18 |
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Keywords
- CMOS
- GaAs
- Ka-band
- power amplifier (PA)
- satellite
ASJC Scopus subject areas
- Computer Networks and Communications
- Aerospace Engineering
- Instrumentation
Cite this
Alsuraisry, H., Yen, S. T., Tsai, J. H., & Huang, T. W. (2017). Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor. In Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017 (pp. 25-27). [7869771] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TWIOS.2017.7869771