Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor

Hamed Alsuraisry; Shao Ting Yen; Jeng Han Tsai; Tian Wei Huang

doi:10.1109/TWIOS.2017.7869771

Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor

Hamed Alsuraisry, Shao Ting Yen, Jeng Han Tsai, Tian Wei Huang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP1dB) 26 dBm and the power-added efficiency at OP1dB of 25.7%.

Original language	English
Title of host publication	Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	25-27
Number of pages	3
ISBN (Electronic)	9781509034635
DOIs	https://doi.org/10.1109/TWIOS.2017.7869771
Publication status	Published - 2017 Mar 2
Event	2017 Topical Workshop on Internet of Space, TWIOS 2017 - Phoenix, United States Duration: 2017 Jan 15 → 2017 Jan 18

Other

Other	2017 Topical Workshop on Internet of Space, TWIOS 2017
Country	United States
City	Phoenix
Period	2017/01/15 → 2017/01/18

Keywords

CMOS
GaAs
Ka-band
power amplifier (PA)
satellite

ASJC Scopus subject areas

Computer Networks and Communications
Aerospace Engineering
Instrumentation

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10.1109/TWIOS.2017.7869771

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Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor. / Alsuraisry, Hamed; Yen, Shao Ting; Tsai, Jeng Han; Huang, Tian Wei.

Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 25-27 7869771.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Alsuraisry, H, Yen, ST, Tsai, JH & Huang, TW 2017, Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor. in Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017., 7869771, Institute of Electrical and Electronics Engineers Inc., pp. 25-27, 2017 Topical Workshop on Internet of Space, TWIOS 2017, Phoenix, United States, 2017/01/15. https://doi.org/10.1109/TWIOS.2017.7869771

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title = "Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor",

abstract = "In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP1dB) 26 dBm and the power-added efficiency at OP1dB of 25.7%.",

keywords = "CMOS, GaAs, Ka-band, power amplifier (PA), satellite",

author = "Hamed Alsuraisry and Yen, {Shao Ting} and Tsai, {Jeng Han} and Huang, {Tian Wei}",

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doi = "10.1109/TWIOS.2017.7869771",

language = "English",

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booktitle = "Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017",

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PY - 2017/3/2

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N2 - In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP1dB) 26 dBm and the power-added efficiency at OP1dB of 25.7%.

AB - In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP1dB) 26 dBm and the power-added efficiency at OP1dB of 25.7%.

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KW - GaAs

KW - Ka-band

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KW - satellite

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Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor

Abstract

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Keywords

ASJC Scopus subject areas

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