K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology

Meng Ting Lin; Chun Yu Lin

doi:10.1109/IPFA.2017.8060074

K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology

Meng Ting Lin, Chun Yu Lin

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

An electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power clamp is presented to protect a K-band low-noise-amplifier in nanoscale CMOS process. Experimental results show that the proposed design can achieve higher ESD robustness without degrading the radio-frequency (RF) performance. Based on its good performances during ESD stress and RF circuit operating conditions, the proposed design is very suitable for RF ESD protection.

Original language	English
Title of host publication	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781538617793
DOIs	https://doi.org/10.1109/IPFA.2017.8060074
Publication status	Published - 2017 Oct 5
Event	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, China Duration: 2017 Jul 4 → 2017 Jul 7

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2017-July

Conference

Conference	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Country/Territory	China
City	Chengdu
Period	2017/07/04 → 2017/07/07

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IPFA.2017.8060074

Cite this

Lin, M. T., & Lin, C. Y. (2017). K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 (pp. 1-4). (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2017.8060074

K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology. / Lin, Meng Ting; Lin, Chun Yu.
24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, MT & Lin, CY 2017, K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology. in 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2017-July, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017, Chengdu, China, 2017/07/04. https://doi.org/10.1109/IPFA.2017.8060074

Lin MT, Lin CY. K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-4. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2017.8060074

Lin, Meng Ting ; Lin, Chun Yu. / K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology. 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-4 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology

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