K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology

Meng Ting Lin, Chun Yu Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power clamp is presented to protect a K-band low-noise-amplifier in nanoscale CMOS process. Experimental results show that the proposed design can achieve higher ESD robustness without degrading the radio-frequency (RF) performance. Based on its good performances during ESD stress and RF circuit operating conditions, the proposed design is very suitable for RF ESD protection.

Original languageEnglish
Title of host publication24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538617793
DOIs
Publication statusPublished - 2017 Oct 5
Event24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, China
Duration: 2017 Jul 42017 Jul 7

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2017-July

Conference

Conference24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
CountryChina
CityChengdu
Period17/7/417/7/7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Lin, M. T., & Lin, C. Y. (2017). K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 (pp. 1-4). (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2017.8060074