Investigations of surface structure for thermally evaporated silicon on a Cu(111) surface

J. S. Tsay*, A. B. Yang, C. N. Wu, F. S. Shiu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The surface structure and composition of semiconductor/Cu(111) films prepared by thermal evaporation in an ultrahigh vacuum condition have been investigated. As Si atoms were deposited on a Cu(111) surface, diffused sqrt(3) × sqrt(3) R 300 spots were observed up to 2 monolayers while 1 × 1 spots become dimmer as revealed using low-energy electron diffraction technique. Because of a larger electron affinity of Si than that of Cu, the Cu L3M45M45 Auger line shifts to a lower kinetic energy. Annealing treatments at 425 K causes a splitting of the Cu L3M45M45 line. This shows the interdiffusion at the Si/Cu interface and the formation of a Cu-rich surface layer. After annealing treatments, the sqrt(3) × sqrt(3) R 300 domains grow and aggregate to form larger domains as revealed by the decreasing full-width at half maximum of diffraction spots. Ge/Cu(111) shows 1 × 1 structure as annealing up to 500 K. Lack of a dominant structure and a large valence diameter of Ge result in different structures as compared to Si/Cu(111).

Original languageEnglish
Pages (from-to)8285-8289
Number of pages5
JournalThin Solid Films
Issue number22
Publication statusPublished - 2007 Aug 15


  • Auger electron spectroscopy
  • Low-energy electron diffraction
  • Silicides
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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