Investigations of surface structure for thermally evaporated silicon on a Cu(111) surface

The surface structure and composition of semiconductor/Cu(111) films prepared by thermal evaporation in an ultrahigh vacuum condition have been investigated. As Si atoms were deposited on a Cu(111) surface, diffused sqrt(3) × sqrt(3) R 30⁰ spots were observed up to 2 monolayers while 1 × 1 spots become dimmer as revealed using low-energy electron diffraction technique. Because of a larger electron affinity of Si than that of Cu, the Cu L₃M₄₅M₄₅ Auger line shifts to a lower kinetic energy. Annealing treatments at 425 K causes a splitting of the Cu L₃M₄₅M₄₅ line. This shows the interdiffusion at the Si/Cu interface and the formation of a Cu-rich surface layer. After annealing treatments, the sqrt(3) × sqrt(3) R 30⁰ domains grow and aggregate to form larger domains as revealed by the decreasing full-width at half maximum of diffraction spots. Ge/Cu(111) shows 1 × 1 structure as annealing up to 500 K. Lack of a dominant structure and a large valence diameter of Ge result in different structures as compared to Si/Cu(111).