Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

Tun Jen Chang, Chien Liu, Chia Chi Fan, Hsiao Hsuan Hsu, Hsuan Han Chen, Wan Hsin Chen, Yu Chi Fan, Tsung Ming Lee, Chien Liang Lin, Jun Ma, Zhi Wei Zheng, Chun Hu Cheng, Shih An Wang, Chun Yen Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlOx also exhibited robust polarization characteristics under endurance cycling test. A >106 stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 × 107 cycles under 3.6 MV/cm. Therefore, the HfAlOx film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.

Original languageEnglish
Pages (from-to)11-14
Number of pages4
JournalVacuum
Volume166
DOIs
Publication statusPublished - 2019 Aug

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Keywords

  • Domain pinning
  • Endurance cycling
  • Ferroelectric
  • HfAlO
  • Thermal stability

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

Chang, T. J., Liu, C., Fan, C. C., Hsu, H. H., Chen, H. H., Chen, W. H., Fan, Y. C., Lee, T. M., Lin, C. L., Ma, J., Zheng, Z. W., Cheng, C. H., Wang, S. A., & Chang, C. Y. (2019). Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides. Vacuum, 166, 11-14. https://doi.org/10.1016/j.vacuum.2019.04.045