Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

Tun Jen Chang, Chien Liu, Chia Chi Fan, Hsiao Hsuan Hsu, Hsuan Han Chen, Wan Hsin Chen, Yu Chi Fan, Tsung Ming Lee, Chien Liang Lin, Jun Ma, Zhi Wei Zheng, Chun-Hu Cheng, Shih An Wang, Chun Yen Chang

Research output: Contribution to journalArticle

Abstract

In this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlOx also exhibited robust polarization characteristics under endurance cycling test. A >106 stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 × 107 cycles under 3.6 MV/cm. Therefore, the HfAlOx film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.

Original languageEnglish
Pages (from-to)11-14
Number of pages4
JournalVacuum
Volume166
DOIs
Publication statusPublished - 2019 Aug 1

Fingerprint

Hafnium
hafnium oxides
polarization characteristics
Aluminum Oxide
Ferroelectric materials
aluminum oxides
endurance
Polarization
Aluminum
Data storage equipment
cycles
Oxides
Durability
Ferroelectric films
budgets
thermal stability
Zirconium
aluminum
annealing
Thermodynamic stability

Keywords

  • Domain pinning
  • Endurance cycling
  • Ferroelectric
  • HfAlO
  • Thermal stability

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

Chang, T. J., Liu, C., Fan, C. C., Hsu, H. H., Chen, H. H., Chen, W. H., ... Chang, C. Y. (2019). Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides. Vacuum, 166, 11-14. https://doi.org/10.1016/j.vacuum.2019.04.045

Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides. / Chang, Tun Jen; Liu, Chien; Fan, Chia Chi; Hsu, Hsiao Hsuan; Chen, Hsuan Han; Chen, Wan Hsin; Fan, Yu Chi; Lee, Tsung Ming; Lin, Chien Liang; Ma, Jun; Zheng, Zhi Wei; Cheng, Chun-Hu; Wang, Shih An; Chang, Chun Yen.

In: Vacuum, Vol. 166, 01.08.2019, p. 11-14.

Research output: Contribution to journalArticle

Chang, TJ, Liu, C, Fan, CC, Hsu, HH, Chen, HH, Chen, WH, Fan, YC, Lee, TM, Lin, CL, Ma, J, Zheng, ZW, Cheng, C-H, Wang, SA & Chang, CY 2019, 'Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides', Vacuum, vol. 166, pp. 11-14. https://doi.org/10.1016/j.vacuum.2019.04.045
Chang, Tun Jen ; Liu, Chien ; Fan, Chia Chi ; Hsu, Hsiao Hsuan ; Chen, Hsuan Han ; Chen, Wan Hsin ; Fan, Yu Chi ; Lee, Tsung Ming ; Lin, Chien Liang ; Ma, Jun ; Zheng, Zhi Wei ; Cheng, Chun-Hu ; Wang, Shih An ; Chang, Chun Yen. / Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides. In: Vacuum. 2019 ; Vol. 166. pp. 11-14.
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