@inproceedings{4b111371a0ba47af9dd27d7c16679a27,
title = "Investigation on Channel Plasma Effect in Doped Tin-Oxide Thin-Film Transistors Using Experiments and Simulation",
abstract = "In this paper, we reported ap-channel tin-oxide (SnO) thin-film transistor (TFT) by introducing aluminum (AI) dopant in the SnO channel layer. An extremely high field-effect mobility (\mu_{\text{FE}}) of 8 cm2/V·s and an on-to-off current ratio (I_{\text{on}}/I_{\text{off}}) of 103 were obtained in this p-channel Al-doped SnO (A1:SnO) TFT. Furthermore, the device performances of the Al:SnO TFT including the I_{\text{on}}/I_{\text{off}} and subthreshold swing (SS) were greatly improved by fluorine plasma treatment (FPT) on the Al:SnO channel layer. In addition, in order to study the channel plasma effect on the device performances, TCAD simulation was carried out based on the p-channel Al:SnO TFT by introducing the density of state (DOS) model. The simulation results indicated that the device performance enhancements were further achieved because the attributes of acceptor-like Gaussian defect states and donor-like band-tail state were modified during the FPT.",
author = "Shang, {Zong Wei} and Qian Xu and He, {Guan You} and Zheng, {Zhi Wei} and Cheng, {Chun Hu}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 China Semiconductor Technology International Conference, CSTIC 2021 ; Conference date: 14-03-2021 Through 15-03-2021",
year = "2021",
month = mar,
day = "14",
doi = "10.1109/CSTIC52283.2021.9461466",
language = "English",
series = "China Semiconductor Technology International Conference 2021, CSTIC 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Cor Claeys and Liang, {Steve X.} and Qinghuang Lin and Ru Huang and Hanming Wu and Peilin Song and Linyong Pang and Ying Zhang and Beichao Zhang and {Xinping Qu}, Xinping and Cheng Zhuo and Hsiang-Lan Lung",
booktitle = "China Semiconductor Technology International Conference 2021, CSTIC 2021",
}