Investigation of the binding affinity of C-terminal domain of SARS coronavirus nucleocapsid protein to nucleotide using AlGaN/GaN high electron mobility transistors

You Ren Hsu, Geng Yen Lee, Jen Inn Chyi, Chung Ke Chang, Chih Cheng Huang, Chen Pin Hsu, Tai-huang Huang, Fan Ren, Yu Lin Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this article, we used AlGaN/GaN high electron mobility transistors (HEMTs) to construct the first label-free semiconductor-sensor-based binding assay to our knowledge. Our results suggested that the nucleotide-c terminal domain of SARS coronavirus (SARS-CoV) nucleocapsid protein interaction is a two-step binding event with two dissociation constants (Kd1 = 0.052 nM, and Kd2 = 51.24nM) extracted by using the modified two-binding-site Langmuir isotherm equation proposed here. We found that there were at least two protein binding sites on the specific 41-base SARS-CoV double-stranded DNA (dsDNA) genome (29,580-29621) conjugated with a 20-mer poly-dT tail. This result presented a high binding affinity is comparable with the antibody-antigen reaction, and suggested this designed dsDNA could be treated as an aptamer for SARS-CoV N protein capture.

Original languageEnglish
Title of host publicationIEEE SENSORS 2012 - Proceedings
DOIs
Publication statusPublished - 2012 Dec 1
Event11th IEEE SENSORS 2012 Conference - Taipei, Taiwan
Duration: 2012 Oct 282012 Oct 31

Publication series

NameProceedings of IEEE Sensors

Other

Other11th IEEE SENSORS 2012 Conference
CountryTaiwan
CityTaipei
Period12/10/2812/10/31

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Hsu, Y. R., Lee, G. Y., Chyi, J. I., Chang, C. K., Huang, C. C., Hsu, C. P., Huang, T., Ren, F., & Wang, Y. L. (2012). Investigation of the binding affinity of C-terminal domain of SARS coronavirus nucleocapsid protein to nucleotide using AlGaN/GaN high electron mobility transistors. In IEEE SENSORS 2012 - Proceedings [6411277] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2012.6411277