Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode

Yu Chien Chiu, Chun Hu Cheng, Chun Yen Chang, Ying Tsan Tang, Min Cheng Chen

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

In this work, we report a ferroelectric memory with strained-gate engineering. The memory window of the high strain case was improved by ∼71% at the same ferroelectric thickness. The orthorhombic phase transition (from ferroelectric to anti-ferroelectric transition) plays a key role in realizing negative capacitance effect at high gate electric field. Based on a reliable first principles calculation, we clarify that the gate strain accelerates the phase transformation from metastable monoclinic to orthorhombic and thus largely enhances the ferroelectric polarization without increasing dielectric thickness. This ferroelectric strain technology shows the potential for emerging device application. (Figure presented.).

Original languageEnglish
Article number1600368
JournalPhysica Status Solidi - Rapid Research Letters
Volume11
Issue number3
DOIs
Publication statusPublished - 2017 Mar 1

Keywords

  • HfZrO
  • ferroelectrics
  • negative capacitance
  • phase transitions
  • strain
  • transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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