Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides

Chien Liu; Chia Chi Fan; Chih Yang Tseng; Hsiao Hsuan Hsu; Chun Hu Cheng; Yen Liang Chen; Chun Yen Chang; Wu Ching Chou; Chien Liang Lin; Yu Chi Fan; Tsung Ming Lee

doi:10.1109/ICSICT.2018.8565049

Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides

Chien Liu, Chia Chi Fan, Chih Yang Tseng, Hsiao Hsuan Hsu, Chun Hu Cheng, Yen Liang Chen, Chun Yen Chang, Wu Ching Chou, Chien Liang Lin, Yu Chi Fan, Tsung Ming Lee

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAlO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAlO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.

Original language	English
Title of host publication	2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
Editors	Ting-Ao Tang, Fan Ye, Yu-Long Jiang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538644409
DOIs	https://doi.org/10.1109/ICSICT.2018.8565049
Publication status	Published - 2018 Dec 5
Event	14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China Duration: 2018 Oct 31 → 2018 Nov 3

Publication series

Name	2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Other

Other	14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
Country/Territory	China
City	Qingdao
Period	2018/10/31 → 2018/11/03

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2018.8565049

Cite this

Liu, C., Fan, C. C., Tseng, C. Y., Hsu, H. H., Cheng, C. H., Chen, Y. L., Chang, C. Y., Chou, W. C., Lin, C. L., Fan, Y. C., & Lee, T. M. (2018). Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides. In T.-A. Tang, F. Ye, & Y.-L. Jiang (Eds.), 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings Article 8565049 (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2018.8565049

Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides. / Liu, Chien; Fan, Chia Chi; Tseng, Chih Yang et al.
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. ed. / Ting-Ao Tang; Fan Ye; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2018. 8565049 (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, C, Fan, CC, Tseng, CY, Hsu, HH, Cheng, CH, Chen, YL, Chang, CY, Chou, WC, Lin, CL, Fan, YC & Lee, TM 2018, Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides. in T-A Tang, F Ye & Y-L Jiang (eds), 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings., 8565049, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018, Qingdao, China, 2018/10/31. https://doi.org/10.1109/ICSICT.2018.8565049

Liu C, Fan CC, Tseng CY, Hsu HH, Cheng CH, Chen YL et al. Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides. In Tang TA, Ye F, Jiang YL, editors, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8565049. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings). doi: 10.1109/ICSICT.2018.8565049

Liu, Chien ; Fan, Chia Chi ; Tseng, Chih Yang et al. / Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides. 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. editor / Ting-Ao Tang ; Fan Ye ; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

@inproceedings{6766d9c7d61544a5af5d3d224b3dfc50,

title = "Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides",

abstract = "In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAlO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAlO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.",

author = "Chien Liu and Fan, {Chia Chi} and Tseng, {Chih Yang} and Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu} and Chen, {Yen Liang} and Chang, {Chun Yen} and Chou, {Wu Ching} and Lin, {Chien Liang} and Fan, {Yu Chi} and Lee, {Tsung Ming}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 ; Conference date: 31-10-2018 Through 03-11-2018",

year = "2018",

month = dec,

day = "5",

doi = "10.1109/ICSICT.2018.8565049",

language = "English",

series = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Ting-Ao Tang and Fan Ye and Yu-Long Jiang",

booktitle = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",

}

TY - GEN

T1 - Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides

AU - Liu, Chien

AU - Fan, Chia Chi

AU - Tseng, Chih Yang

AU - Hsu, Hsiao Hsuan

AU - Cheng, Chun Hu

AU - Chen, Yen Liang

AU - Chang, Chun Yen

AU - Chou, Wu Ching

AU - Lin, Chien Liang

AU - Fan, Yu Chi

AU - Lee, Tsung Ming

PY - 2018/12/5

Y1 - 2018/12/5

N2 - In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAlO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAlO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.

AB - In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAlO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAlO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.

UR - http://www.scopus.com/inward/record.url?scp=85060289702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060289702&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2018.8565049

DO - 10.1109/ICSICT.2018.8565049

M3 - Conference contribution

AN - SCOPUS:85060289702

T3 - 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

BT - 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

A2 - Tang, Ting-Ao

A2 - Ye, Fan

A2 - Jiang, Yu-Long

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018

Y2 - 31 October 2018 through 3 November 2018

ER -

Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides

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