Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides

Chien Liu, Chia Chi Fan, Chih Yang Tseng, Hsiao Hsuan Hsu, Chun-Hu Cheng, Yen Liang Chen, Chun Yen Chang, Wu Ching Chou, Chien Liang Lin, Yu Chi Fan, Tsung Ming Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAlO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAlO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.

Original languageEnglish
Title of host publication2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
EditorsTing-Ao Tang, Fan Ye, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538644409
DOIs
Publication statusPublished - 2018 Dec 5
Event14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China
Duration: 2018 Oct 312018 Nov 3

Publication series

Name2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Other

Other14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
CountryChina
CityQingdao
Period18/10/3118/11/3

Fingerprint

Hafnium oxides
Ferroelectric materials
Hysteresis
Polarization
Aluminum
Doping (additives)
Capacitors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Liu, C., Fan, C. C., Tseng, C. Y., Hsu, H. H., Cheng, C-H., Chen, Y. L., ... Lee, T. M. (2018). Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides. In T-A. Tang, F. Ye, & Y-L. Jiang (Eds.), 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings [8565049] (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2018.8565049

Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides. / Liu, Chien; Fan, Chia Chi; Tseng, Chih Yang; Hsu, Hsiao Hsuan; Cheng, Chun-Hu; Chen, Yen Liang; Chang, Chun Yen; Chou, Wu Ching; Lin, Chien Liang; Fan, Yu Chi; Lee, Tsung Ming.

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. ed. / Ting-Ao Tang; Fan Ye; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2018. 8565049 (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, C, Fan, CC, Tseng, CY, Hsu, HH, Cheng, C-H, Chen, YL, Chang, CY, Chou, WC, Lin, CL, Fan, YC & Lee, TM 2018, Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides. in T-A Tang, F Ye & Y-L Jiang (eds), 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings., 8565049, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018, Qingdao, China, 18/10/31. https://doi.org/10.1109/ICSICT.2018.8565049
Liu C, Fan CC, Tseng CY, Hsu HH, Cheng C-H, Chen YL et al. Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides. In Tang T-A, Ye F, Jiang Y-L, editors, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8565049. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings). https://doi.org/10.1109/ICSICT.2018.8565049
Liu, Chien ; Fan, Chia Chi ; Tseng, Chih Yang ; Hsu, Hsiao Hsuan ; Cheng, Chun-Hu ; Chen, Yen Liang ; Chang, Chun Yen ; Chou, Wu Ching ; Lin, Chien Liang ; Fan, Yu Chi ; Lee, Tsung Ming. / Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides. 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. editor / Ting-Ao Tang ; Fan Ye ; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).
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abstract = "In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAlO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAlO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.",
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AB - In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAlO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAlO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.

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