Investigation of photonic band gap in a semiconductor-organic photonic crystal in ultraviolet region

Chien Jang Wu; Huan Chuen Lin

doi:10.1007/s10043-011-0065-4

Investigation of photonic band gap in a semiconductor-organic photonic crystal in ultraviolet region

Chien Jang Wu^*, Huan Chuen Lin

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We give a theoretical analysis of the photonic band gap in a one-dimensional semiconductor-organic photonic crystal containing a period of AlN/3-octylthiophenes (P3OT) bilayer. The band gap is investigated based on the reflectance calculated by using the transfer matrix method. It is shown that, in the ultraviolet region, there is a photonic band gap which is strongly dependent on the loss and the incident angle for the transverse electric and transverse magnetic waves. Additionally, we find the photonic band gap can be significantly widened in a ternary semiconductor-metal-organic one. The effect of distinct metal on the band gap is also illustrated.

Original language	English
Pages (from-to)	338-342
Number of pages	5
Journal	Optical Review
Volume	18
Issue number	4
DOIs	https://doi.org/10.1007/s10043-011-0065-4
Publication status	Published - 2011 Jul

Keywords

UV region
metal layer
photonic band structure
transfer matrix method

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1007/s10043-011-0065-4

Cite this

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abstract = "We give a theoretical analysis of the photonic band gap in a one-dimensional semiconductor-organic photonic crystal containing a period of AlN/3-octylthiophenes (P3OT) bilayer. The band gap is investigated based on the reflectance calculated by using the transfer matrix method. It is shown that, in the ultraviolet region, there is a photonic band gap which is strongly dependent on the loss and the incident angle for the transverse electric and transverse magnetic waves. Additionally, we find the photonic band gap can be significantly widened in a ternary semiconductor-metal-organic one. The effect of distinct metal on the band gap is also illustrated.",

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AU - Wu, Chien Jang

AU - Lin, Huan Chuen

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N2 - We give a theoretical analysis of the photonic band gap in a one-dimensional semiconductor-organic photonic crystal containing a period of AlN/3-octylthiophenes (P3OT) bilayer. The band gap is investigated based on the reflectance calculated by using the transfer matrix method. It is shown that, in the ultraviolet region, there is a photonic band gap which is strongly dependent on the loss and the incident angle for the transverse electric and transverse magnetic waves. Additionally, we find the photonic band gap can be significantly widened in a ternary semiconductor-metal-organic one. The effect of distinct metal on the band gap is also illustrated.

AB - We give a theoretical analysis of the photonic band gap in a one-dimensional semiconductor-organic photonic crystal containing a period of AlN/3-octylthiophenes (P3OT) bilayer. The band gap is investigated based on the reflectance calculated by using the transfer matrix method. It is shown that, in the ultraviolet region, there is a photonic band gap which is strongly dependent on the loss and the incident angle for the transverse electric and transverse magnetic waves. Additionally, we find the photonic band gap can be significantly widened in a ternary semiconductor-metal-organic one. The effect of distinct metal on the band gap is also illustrated.

KW - UV region

KW - metal layer

KW - photonic band structure

KW - transfer matrix method

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EP - 342

JO - Optical Review

JF - Optical Review

IS - 4

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Investigation of photonic band gap in a semiconductor-organic photonic crystal in ultraviolet region

Abstract

Keywords

ASJC Scopus subject areas

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