Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer

Kuan Wei Liu; Hsuan Han Chen; Zhong Ying Huang; Wei Chun Wang; Yu Chi Fan; Ching Liang Lin; Chih Chieh Hsu; Chia Chi Fan; Hsiao Hsuan Hsu; Chun Yen Chang; Chien Chung Lin; Chun Hu Cheng

doi:10.1109/EDSSC.2019.8754036

Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer

Kuan Wei Liu, Hsuan Han Chen, Zhong Ying Huang, Wei Chun Wang, Yu Chi Fan, Ching Liang Lin, Chih Chieh Hsu, Chia Chi Fan, Hsiao Hsuan Hsu, Chun Yen Chang, Chien Chung Lin, Chun Hu Cheng

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this paper, the ferroelectric polarization effect of ZrO capping layer on HfO MFM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO film can be induced by a thin ZrO capping layer. The thickness of ZrO capping layer plays an important role in the ferroelectric polarization of HfO MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO/HfO film shows the advantage for suppressing the leakage issue during hightemperature ferroelectric phase transition.

Original language	English
Title of host publication	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728102863
DOIs	https://doi.org/10.1109/EDSSC.2019.8754036
Publication status	Published - 2019 Jun
Event	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, China Duration: 2019 Jun 12 → 2019 Jun 14

Publication series

Name	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Conference

Conference	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Country/Territory	China
City	Xi'an
Period	2019/06/12 → 2019/06/14

Keywords

Ferroelectricity
Hafnium oxide
Phase transition
Zirconium oxide

ASJC Scopus subject areas

Signal Processing
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/EDSSC.2019.8754036

Cite this

Liu, K. W., Chen, H. H., Huang, Z. Y., Wang, W. C., Fan, Y. C., Lin, C. L., Hsu, C. C., Fan, C. C., Hsu, H. H., Chang, C. Y., Lin, C. C., & Cheng, C. H. (2019). Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 Article 8754036 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2019.8754036

Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer. / Liu, Kuan Wei; Chen, Hsuan Han; Huang, Zhong Ying et al.
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8754036 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, KW, Chen, HH, Huang, ZY, Wang, WC, Fan, YC, Lin, CL, Hsu, CC, Fan, CC, Hsu, HH, Chang, CY, Lin, CC & Cheng, CH 2019, Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer. in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019., 8754036, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Xi'an, China, 2019/06/12. https://doi.org/10.1109/EDSSC.2019.8754036

Liu KW, Chen HH, Huang ZY, Wang WC, Fan YC, Lin CL et al. Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8754036. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). doi: 10.1109/EDSSC.2019.8754036

Liu, Kuan Wei ; Chen, Hsuan Han ; Huang, Zhong Ying et al. / Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer. 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

@inproceedings{984afaaacda54f889f3721a47abd4198,

title = "Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer",

abstract = "In this paper, the ferroelectric polarization effect of ZrO capping layer on HfO MFM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO film can be induced by a thin ZrO capping layer. The thickness of ZrO capping layer plays an important role in the ferroelectric polarization of HfO MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO/HfO film shows the advantage for suppressing the leakage issue during hightemperature ferroelectric phase transition.",

keywords = "Ferroelectricity, Hafnium oxide, Phase transition, Zirconium oxide",

author = "Liu, {Kuan Wei} and Chen, {Hsuan Han} and Huang, {Zhong Ying} and Wang, {Wei Chun} and Fan, {Yu Chi} and Lin, {Ching Liang} and Hsu, {Chih Chieh} and Fan, {Chia Chi} and Hsu, {Hsiao Hsuan} and Chang, {Chun Yen} and Lin, {Chien Chung} and Cheng, {Chun Hu}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 ; Conference date: 12-06-2019 Through 14-06-2019",

year = "2019",

month = jun,

doi = "10.1109/EDSSC.2019.8754036",

language = "English",

series = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",

}

TY - GEN

T1 - Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer

AU - Liu, Kuan Wei

AU - Chen, Hsuan Han

AU - Huang, Zhong Ying

AU - Wang, Wei Chun

AU - Fan, Yu Chi

AU - Lin, Ching Liang

AU - Hsu, Chih Chieh

AU - Fan, Chia Chi

AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

AU - Lin, Chien Chung

AU - Cheng, Chun Hu

PY - 2019/6

Y1 - 2019/6

N2 - In this paper, the ferroelectric polarization effect of ZrO capping layer on HfO MFM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO film can be induced by a thin ZrO capping layer. The thickness of ZrO capping layer plays an important role in the ferroelectric polarization of HfO MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO/HfO film shows the advantage for suppressing the leakage issue during hightemperature ferroelectric phase transition.

AB - In this paper, the ferroelectric polarization effect of ZrO capping layer on HfO MFM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO film can be induced by a thin ZrO capping layer. The thickness of ZrO capping layer plays an important role in the ferroelectric polarization of HfO MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO/HfO film shows the advantage for suppressing the leakage issue during hightemperature ferroelectric phase transition.

KW - Ferroelectricity

KW - Hafnium oxide

KW - Phase transition

KW - Zirconium oxide

UR - http://www.scopus.com/inward/record.url?scp=85069538596&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069538596&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2019.8754036

DO - 10.1109/EDSSC.2019.8754036

M3 - Conference contribution

AN - SCOPUS:85069538596

T3 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

BT - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Y2 - 12 June 2019 through 14 June 2019

ER -

Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this