Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer

Kuan Wei Liu, Hsuan Han Chen, Zhong Ying Huang, Wei Chun Wang, Yu Chi Fan, Ching Liang Lin, Chih Chieh Hsu, Chia Chi Fan, Hsiao Hsuan Hsu, Chun Yen Chang, Chien Chung Lin, Chun Hu Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the ferroelectric polarization effect of ZrO capping layer on HfO MFM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO film can be induced by a thin ZrO capping layer. The thickness of ZrO capping layer plays an important role in the ferroelectric polarization of HfO MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO/HfO film shows the advantage for suppressing the leakage issue during hightemperature ferroelectric phase transition.

Original languageEnglish
Title of host publication2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728102863
DOIs
Publication statusPublished - 2019 Jun
Event2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, China
Duration: 2019 Jun 122019 Jun 14

Publication series

Name2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Conference

Conference2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
CountryChina
CityXi'an
Period19/6/1219/6/14

Keywords

  • Ferroelectricity
  • Hafnium oxide
  • Phase transition
  • Zirconium oxide

ASJC Scopus subject areas

  • Signal Processing
  • Electrical and Electronic Engineering
  • Instrumentation

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  • Cite this

    Liu, K. W., Chen, H. H., Huang, Z. Y., Wang, W. C., Fan, Y. C., Lin, C. L., Hsu, C. C., Fan, C. C., Hsu, H. H., Chang, C. Y., Lin, C. C., & Cheng, C. H. (2019). Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 [8754036] (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2019.8754036