Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

Chun Hu Cheng; Chia Chi Fan; Chien Liu; Hsiao Hsuan Hsu; Hsuan Han Chen; Chih Chieh Hsu; Shih An Wang; Chun Yen Chang

doi:10.1109/TED.2018.2888836

Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

Chun Hu Cheng^*, Chia Chi Fan, Chien Liu, Hsiao Hsuan Hsu, Hsuan Han Chen, Chih Chieh Hsu, Shih An Wang, Chun Yen Chang

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

In this paper, we reported a ferroelectric HfAlO _x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO _x transistor with GS engineering percentage of I _ON enhancement and 27% V _T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO _x and stabilizing the NC effect, which shows the potential for the application of advanced technology node.

Original language	English
Article number	8598996
Pages (from-to)	1082-1086
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	2
DOIs	https://doi.org/10.1109/TED.2018.2888836
Publication status	Published - 2019 Feb

Keywords

Ferroelectrics
gate stress (GS)
negative capacitance (NC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2018.2888836

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title = "Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides",

abstract = " In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of I ON enhancement and 27% V T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO x and stabilizing the NC effect, which shows the potential for the application of advanced technology node.",

keywords = "Ferroelectrics, gate stress (GS), negative capacitance (NC)",

author = "Cheng, {Chun Hu} and Fan, {Chia Chi} and Chien Liu and Hsu, {Hsiao Hsuan} and Chen, {Hsuan Han} and Hsu, {Chih Chieh} and Wang, {Shih An} and Chang, {Chun Yen}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2019",

month = feb,

doi = "10.1109/TED.2018.2888836",

language = "English",

volume = "66",

pages = "1082--1086",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

AU - Cheng, Chun Hu

AU - Fan, Chia Chi

AU - Liu, Chien

AU - Hsu, Hsiao Hsuan

AU - Chen, Hsuan Han

AU - Hsu, Chih Chieh

AU - Wang, Shih An

AU - Chang, Chun Yen

PY - 2019/2

Y1 - 2019/2

N2 - In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of I ON enhancement and 27% V T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO x and stabilizing the NC effect, which shows the potential for the application of advanced technology node.

AB - In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of I ON enhancement and 27% V T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO x and stabilizing the NC effect, which shows the potential for the application of advanced technology node.

KW - Ferroelectrics

KW - gate stress (GS)

KW - negative capacitance (NC)

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JO - IEEE Transactions on Electron Devices

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Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

Abstract

Keywords

ASJC Scopus subject areas

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