Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

Chun Hu Cheng, Chia Chi Fan, Chien Liu, Hsiao Hsuan Hsu, Hsuan Han Chen, Chih Chieh Hsu, Shih An Wang, Chun Yen Chang

Research output: Contribution to journalArticle

4 Citations (Scopus)


In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of I ON enhancement and 27% V T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO x and stabilizing the NC effect, which shows the potential for the application of advanced technology node.

Original languageEnglish
Article number8598996
Pages (from-to)1082-1086
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number2
Publication statusPublished - 2019 Feb



  • Ferroelectrics
  • gate stress (GS)
  • negative capacitance (NC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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