Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric

M. H. Lin, Y. C. Lin, Y. S. Lin, W. J. Sun, S. H. Chen, Y. C. Chiu, C. H. Cheng, C. Y. Chang

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Fingerprint Dive into the research topics of 'Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al<sub>2</sub>O<sub>3</sub> gate dielectric'. Together they form a unique fingerprint.

    Chemical Compounds

    Engineering & Materials Science