Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric

M. H. Lin; Y. C. Lin; Y. S. Lin; W. J. Sun; S. H. Chen; Y. C. Chiu; C. H. Cheng; C. Y. Chang

doi:10.1149/2.0261704jss

Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al₂O₃ gate dielectric

M. H. Lin
, Y. C. Lin
, Y. S. Lin
, W. J. Sun
, S. H. Chen
, Y. C. Chiu
, C. H. Cheng
, C. Y. Chang

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated an N-type III–V FinFET with a 25-nm In_0.53Ga_0.47As channel and a 300-nm In_0.52Al_0.48As barrier layer on an InP substrate. The In_0.52Al_0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al₂O₃ film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at V_G = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.

Original language	English
Pages (from-to)	Q58-Q62
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	4
DOIs	https://doi.org/10.1149/2.0261704jss
Publication status	Published - 2017

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2.0261704jss

Cite this

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title = "Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric",

abstract = "We investigated an N-type III–V FinFET with a 25-nm In0.53Ga0.47As channel and a 300-nm In0.52Al0.48As barrier layer on an InP substrate. The In0.52Al0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.",

author = "Lin, \{M. H.\} and Lin, \{Y. C.\} and Lin, \{Y. S.\} and Sun, \{W. J.\} and Chen, \{S. H.\} and Chiu, \{Y. C.\} and Cheng, \{C. H.\} and Chang, \{C. Y.\}",

year = "2017",

doi = "10.1149/2.0261704jss",

language = "English",

volume = "6",

pages = "Q58--Q62",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric

AU - Lin, M. H.

AU - Lin, Y. C.

AU - Lin, Y. S.

AU - Sun, W. J.

AU - Chen, S. H.

AU - Chiu, Y. C.

AU - Cheng, C. H.

AU - Chang, C. Y.

PY - 2017

Y1 - 2017

N2 - We investigated an N-type III–V FinFET with a 25-nm In0.53Ga0.47As channel and a 300-nm In0.52Al0.48As barrier layer on an InP substrate. The In0.52Al0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.

AB - We investigated an N-type III–V FinFET with a 25-nm In0.53Ga0.47As channel and a 300-nm In0.52Al0.48As barrier layer on an InP substrate. The In0.52Al0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.

UR - https://www.scopus.com/pages/publications/85020517250

UR - https://www.scopus.com/pages/publications/85020517250#tab=citedBy

U2 - 10.1149/2.0261704jss

DO - 10.1149/2.0261704jss

M3 - Article

AN - SCOPUS:85020517250

SN - 2162-8769

VL - 6

SP - Q58-Q62

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 4

ER -

Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al₂O₃ gate dielectric

Abstract

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