Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric

M. H. Lin; Y. C. Lin; Y. S. Lin; W. J. Sun; S. H. Chen; Y. C. Chiu; C. H. Cheng; C. Y. Chang

doi:10.1149/2.0261704jss

Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al₂O₃ gate dielectric

M. H. Lin, Y. C. Lin, Y. S. Lin, W. J. Sun, S. H. Chen, Y. C. Chiu, C. H. Cheng, C. Y. Chang

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated an N-type III–V FinFET with a 25-nm In_0.53Ga_0.47As channel and a 300-nm In_0.52Al_0.48As barrier layer on an InP substrate. The In_0.52Al_0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al₂O₃ film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at V_G = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.

Original language	English
Pages (from-to)	Q58-Q62
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	4
DOIs	https://doi.org/10.1149/2.0261704jss
Publication status	Published - 2017

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2.0261704jss

Cite this

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title = "Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric",

abstract = "We investigated an N-type III–V FinFET with a 25-nm In0.53Ga0.47As channel and a 300-nm In0.52Al0.48As barrier layer on an InP substrate. The In0.52Al0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.",

author = "Lin, {M. H.} and Lin, {Y. C.} and Lin, {Y. S.} and Sun, {W. J.} and Chen, {S. H.} and Chiu, {Y. C.} and Cheng, {C. H.} and Chang, {C. Y.}",

year = "2017",

doi = "10.1149/2.0261704jss",

language = "English",

volume = "6",

pages = "Q58--Q62",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "4",

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TY - JOUR

T1 - Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric

AU - Lin, M. H.

AU - Lin, Y. C.

AU - Lin, Y. S.

AU - Sun, W. J.

AU - Chen, S. H.

AU - Chiu, Y. C.

AU - Cheng, C. H.

AU - Chang, C. Y.

PY - 2017

Y1 - 2017

N2 - We investigated an N-type III–V FinFET with a 25-nm In0.53Ga0.47As channel and a 300-nm In0.52Al0.48As barrier layer on an InP substrate. The In0.52Al0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.

AB - We investigated an N-type III–V FinFET with a 25-nm In0.53Ga0.47As channel and a 300-nm In0.52Al0.48As barrier layer on an InP substrate. The In0.52Al0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.

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U2 - 10.1149/2.0261704jss

DO - 10.1149/2.0261704jss

M3 - Article

AN - SCOPUS:85020517250

SN - 2162-8769

VL - 6

SP - Q58-Q62

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 4

ER -

Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al₂O₃ gate dielectric

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