Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric

M. H. Lin, Y. C. Lin, Y. S. Lin, W. J. Sun, S. H. Chen, Y. C. Chiu, Chun-Hu Cheng, C. Y. Chang

Research output: Contribution to journalArticle

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Abstract

We investigated an N-type III–V FinFET with a 25-nm In0.53Ga0.47As channel and a 300-nm In0.52Al0.48As barrier layer on an InP substrate. The In0.52Al0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.

Original languageEnglish
Pages (from-to)Q58-Q62
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number4
DOIs
Publication statusPublished - 2017 Jan 1

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Gate dielectrics
Atomic layer deposition
Substrates
Leakage currents
Current density
FinFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric. / Lin, M. H.; Lin, Y. C.; Lin, Y. S.; Sun, W. J.; Chen, S. H.; Chiu, Y. C.; Cheng, Chun-Hu; Chang, C. Y.

In: ECS Journal of Solid State Science and Technology, Vol. 6, No. 4, 01.01.2017, p. Q58-Q62.

Research output: Contribution to journalArticle

Lin, M. H. ; Lin, Y. C. ; Lin, Y. S. ; Sun, W. J. ; Chen, S. H. ; Chiu, Y. C. ; Cheng, Chun-Hu ; Chang, C. Y. / Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric. In: ECS Journal of Solid State Science and Technology. 2017 ; Vol. 6, No. 4. pp. Q58-Q62.
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AU - Lin, Y. C.

AU - Lin, Y. S.

AU - Sun, W. J.

AU - Chen, S. H.

AU - Chiu, Y. C.

AU - Cheng, Chun-Hu

AU - Chang, C. Y.

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AB - We investigated an N-type III–V FinFET with a 25-nm In0.53Ga0.47As channel and a 300-nm In0.52Al0.48As barrier layer on an InP substrate. The In0.52Al0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.

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