Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric

M. H. Lin, Y. C. Lin, Y. S. Lin, W. J. Sun, S. H. Chen, Y. C. Chiu, C. H. Cheng, C. Y. Chang

Research output: Contribution to journalArticle

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Abstract

We investigated an N-type III–V FinFET with a 25-nm In0.53Ga0.47As channel and a 300-nm In0.52Al0.48As barrier layer on an InP substrate. The In0.52Al0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.

Original languageEnglish
Pages (from-to)Q58-Q62
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number4
DOIs
Publication statusPublished - 2017 Jan 1

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Gate dielectrics
Atomic layer deposition
Substrates
Leakage currents
Current density
FinFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric. / Lin, M. H.; Lin, Y. C.; Lin, Y. S.; Sun, W. J.; Chen, S. H.; Chiu, Y. C.; Cheng, C. H.; Chang, C. Y.

In: ECS Journal of Solid State Science and Technology, Vol. 6, No. 4, 01.01.2017, p. Q58-Q62.

Research output: Contribution to journalArticle

Lin, M. H. ; Lin, Y. C. ; Lin, Y. S. ; Sun, W. J. ; Chen, S. H. ; Chiu, Y. C. ; Cheng, C. H. ; Chang, C. Y. / Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric. In: ECS Journal of Solid State Science and Technology. 2017 ; Vol. 6, No. 4. pp. Q58-Q62.
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AU - Lin, M. H.

AU - Lin, Y. C.

AU - Lin, Y. S.

AU - Sun, W. J.

AU - Chen, S. H.

AU - Chiu, Y. C.

AU - Cheng, C. H.

AU - Chang, C. Y.

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AB - We investigated an N-type III–V FinFET with a 25-nm In0.53Ga0.47As channel and a 300-nm In0.52Al0.48As barrier layer on an InP substrate. The In0.52Al0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.

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