Investigation of defect modes in a defective photonic crystal with a semiconductor metamaterial defect

Meng Ru Wu, Chien-Jang Wu, Shoou Jinn Chang

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    In this work, we theoretically investigate the properties of defect modes in a defective photonic crystal containing a semiconductor metamaterial defect. We consider the structure, (LH)N/DP/(LH)N, where N and P are respectively the stack numbers, L is SiO2, H is InP, and defect layer D is a semiconductor metamaterial composed of Al-doped ZnO (AZO) and ZnO. It is found that, within the photonic band gap, the number of defect modes (transmission peaks) will decrease as the defect thickness increases, in sharp contrast to the case of using usual dielectric defect. The peak height and position can be changed by the variation in the thickness of defect layer. In the angle-dependent defect mode, its position is shown to be blue-shifted as the angle of incidence increases for both TE and TM waves. The analysis of defect mode provides useful information for the design of tunable transmission filter in semiconductor optoelectronics.

    Original languageEnglish
    Pages (from-to)146-151
    Number of pages6
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume64
    DOIs
    Publication statusPublished - 2014 Jan 1

    Fingerprint

    Metamaterials
    Photonic crystals
    photonics
    Semiconductor materials
    Defects
    defects
    crystals
    Photonic band gap
    Optoelectronic devices
    incidence
    filters

    Keywords

    • Metamaterials
    • Photonic crystals
    • Semiconductors
    • Wave properties

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics

    Cite this

    Investigation of defect modes in a defective photonic crystal with a semiconductor metamaterial defect. / Wu, Meng Ru; Wu, Chien-Jang; Chang, Shoou Jinn.

    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 64, 01.01.2014, p. 146-151.

    Research output: Contribution to journalArticle

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    AB - In this work, we theoretically investigate the properties of defect modes in a defective photonic crystal containing a semiconductor metamaterial defect. We consider the structure, (LH)N/DP/(LH)N, where N and P are respectively the stack numbers, L is SiO2, H is InP, and defect layer D is a semiconductor metamaterial composed of Al-doped ZnO (AZO) and ZnO. It is found that, within the photonic band gap, the number of defect modes (transmission peaks) will decrease as the defect thickness increases, in sharp contrast to the case of using usual dielectric defect. The peak height and position can be changed by the variation in the thickness of defect layer. In the angle-dependent defect mode, its position is shown to be blue-shifted as the angle of incidence increases for both TE and TM waves. The analysis of defect mode provides useful information for the design of tunable transmission filter in semiconductor optoelectronics.

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