Investigate the characteristics of Bi2O3-added 0.35 (K0.5Bi0.5TiO3)-0.65 BaTiO 3 ceramics

Ying Hsun Lin, Ping Shou Cheng, Chin Guo Kuo, Wen Jiuh Chiang, Cheng Fu Yang

Research output: Contribution to conferencePaperpeer-review

Abstract

In this study, 0.35 K0.5Bi0.5TiO3-0.65 BaTiO3 composition (abbreviated as 0.35 KBT-0.65 BT3) was synthesized using a two-step calcination process, that combined hydrothermal (heated at 200°C for 2 h) and conventionally calcining (calcined at 850°C for 2 h) processes. After calcination, 0∼3wt% Bi2O3 was added into the 0.35 KBT-0.65 BT3 composition (0.35 KBT-0.65 BT3-X, X=0, 1, 2, and 3) as the sintering aid and for compensating the vaporization of Bi 2O3during the sintering process. After mixing with Bi 2O3, 0.35 KBT-0.65 BT3-X ceramics were sintered at 1050°C∼1125°C in air for 2h, and the sintering and dielectric characteristics of the 0.35 KBT-0.65 BT3-X ceramics were well developed. The X-ray diffraction (XRD) pattern and scanning electronic microscope (SEM) observation were used to analyze the variations of crystalline phase and microstructure of the 0.35 KBT-0.65 BT3-X ceramics. Temperature-dependent dielectric characteristics were measured with oscillating amplitude (50 mV) at 100 KHz by an HP4294A impedance analyzer by putting the sintered ceramics in a temperature-programmable testing chamber. The range of measured temperature was changed from 25°C to 500°C in order to find the maximum dielectric constant and Curie temperature of the 0.35 KBT-0.65 BT3-X ceramics.

Original languageEnglish
Pages107-110
Number of pages4
Publication statusPublished - 2014
Event2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China
Duration: 2013 Oct 262013 Nov 1

Other

Other2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
Country/TerritoryChina
CityQingdao
Period2013/10/262013/11/01

Keywords

  • Sintering and dielectric characteristics
  • Two-step calcination process

ASJC Scopus subject areas

  • Management of Technology and Innovation

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