Interference of charge carrier in a double-dot nanopillar transistor

Yue Min Wan*, Hsien Hsun Yang, Chin Lung Sung, Shu Fen Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.

Original languageEnglish
Article number053515
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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