Interference of charge carrier in a double-dot nanopillar transistor

Yue Min Wan; Hsien Hsun Yang; Chin Lung Sung; Shu Fen Hu

doi:10.1063/1.2240531

Interference of charge carrier in a double-dot nanopillar transistor

Yue Min Wan^*, Hsien Hsun Yang, Chin Lung Sung, Shu Fen Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λ_F, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.

Original language	English
Article number	053515
Journal	Applied Physics Letters
Volume	89
Issue number	5
DOIs	https://doi.org/10.1063/1.2240531
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2240531

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title = "Interference of charge carrier in a double-dot nanopillar transistor",

abstract = "In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.",

author = "Wan, {Yue Min} and Yang, {Hsien Hsun} and Sung, {Chin Lung} and Hu, {Shu Fen}",

note = "Funding Information: The authors thank Professor J. S. Yang (National Taiwan Ocean University) for many valuable comments and the research staff in the National Nano Device Laboratories for experimental assist. This work was financially supported by the National Science Council of Taiwan, Republic of China under Contract Nos. NSC94-2119-M-214-001, NSC93-2112-M-492-002, NSC94-2112-M-492-003, NDL-93S-C075, and ISU94-01-06.",

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AU - Wan, Yue Min

AU - Yang, Hsien Hsun

AU - Sung, Chin Lung

AU - Hu, Shu Fen

N1 - Funding Information: The authors thank Professor J. S. Yang (National Taiwan Ocean University) for many valuable comments and the research staff in the National Nano Device Laboratories for experimental assist. This work was financially supported by the National Science Council of Taiwan, Republic of China under Contract Nos. NSC94-2119-M-214-001, NSC93-2112-M-492-002, NSC94-2112-M-492-003, NDL-93S-C075, and ISU94-01-06.

PY - 2006

Y1 - 2006

N2 - In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.

AB - In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.

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Interference of charge carrier in a double-dot nanopillar transistor

Abstract

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