Interference of charge carrier in a double-dot nanopillar transistor

Yue Min Wan, Hsien Hsun Yang, Chin Lung Sung, Shu-Fen Hu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.

Original languageEnglish
Article number053515
JournalApplied Physics Letters
Volume89
Issue number5
DOIs
Publication statusPublished - 2006 Sep 14

Fingerprint

charging
charge carriers
synchronism
transistors
interference
electric potential
wavelengths
excitation
electrons
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Interference of charge carrier in a double-dot nanopillar transistor. / Wan, Yue Min; Yang, Hsien Hsun; Sung, Chin Lung; Hu, Shu-Fen.

In: Applied Physics Letters, Vol. 89, No. 5, 053515, 14.09.2006.

Research output: Contribution to journalArticle

Wan, Yue Min ; Yang, Hsien Hsun ; Sung, Chin Lung ; Hu, Shu-Fen. / Interference of charge carrier in a double-dot nanopillar transistor. In: Applied Physics Letters. 2006 ; Vol. 89, No. 5.
@article{5fb718958df141338679c7536b4b6cad,
title = "Interference of charge carrier in a double-dot nanopillar transistor",
abstract = "In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.",
author = "Wan, {Yue Min} and Yang, {Hsien Hsun} and Sung, {Chin Lung} and Shu-Fen Hu",
year = "2006",
month = "9",
day = "14",
doi = "10.1063/1.2240531",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Interference of charge carrier in a double-dot nanopillar transistor

AU - Wan, Yue Min

AU - Yang, Hsien Hsun

AU - Sung, Chin Lung

AU - Hu, Shu-Fen

PY - 2006/9/14

Y1 - 2006/9/14

N2 - In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.

AB - In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.

UR - http://www.scopus.com/inward/record.url?scp=33748456975&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748456975&partnerID=8YFLogxK

U2 - 10.1063/1.2240531

DO - 10.1063/1.2240531

M3 - Article

AN - SCOPUS:33748456975

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 053515

ER -