Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array

H. L. Chiang; J. F. Wang; K. H. Lin; C. H. Nien; J. J. Wu; K. Y. Hsiang; C. P. Chuu; Y. W. Chen; X. W. Zhang; C. W. Liu; Tahui Wang; C. C. Wang; M. H. Lee; M. F. Chang; C. S. Chang; T. C. Chen

doi:10.1109/VLSITechnologyandCir46769.2022.9830462

Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array

H. L. Chiang
, J. F. Wang
, K. H. Lin
, C. H. Nien
, J. J. Wu
, K. Y. Hsiang
, C. P. Chuu
, Y. W. Chen
, X. W. Zhang
, C. W. Liu
, Tahui Wang
, C. C. Wang
, M. H. Lee
, M. F. Chang
, C. S. Chang
, T. C. Chen^*

^*Corresponding author for this work

Institute and Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.

Original language	English
Title of host publication	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	361-362
Number of pages	2
ISBN (Electronic)	9781665497725
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830462
Publication status	Published - 2022
Event	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States Duration: 2022 Jun 12 → 2022 Jun 17

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2022-June
ISSN (Electronic)	2158-9682

Conference

Conference	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Country/Territory	United States
City	Honolulu
Period	2022/06/12 → 2022/06/17

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSITechnologyandCir46769.2022.9830462

Cite this

Chiang, H. L., Wang, J. F., Lin, K. H., Nien, C. H., Wu, J. J., Hsiang, K. Y., Chuu, C. P., Chen, Y. W., Zhang, X. W., Liu, C. W., Wang, T., Wang, C. C., Lee, M. H., Chang, M. F., Chang, C. S., & Chen, T. C. (2022). Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 (pp. 361-362). (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830462

Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. / Chiang, H. L.; Wang, J. F.; Lin, K. H. et al.
2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 361-362 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chiang, HL, Wang, JF, Lin, KH, Nien, CH, Wu, JJ, Hsiang, KY, Chuu, CP, Chen, YW, Zhang, XW, Liu, CW, Wang, T, Wang, CC, Lee, MH, Chang, MF, Chang, CS & Chen, TC 2022, Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. in 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Digest of Technical Papers - Symposium on VLSI Technology, vol. 2022-June, Institute of Electrical and Electronics Engineers Inc., pp. 361-362, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, Honolulu, United States, 2022/06/12. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830462

Chiang HL, Wang JF, Lin KH, Nien CH, Wu JJ, Hsiang KY et al. Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 361-362. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnologyandCir46769.2022.9830462

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title = "Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array",

abstract = "For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.",

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AU - Hsiang, K. Y.

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AU - Zhang, X. W.

AU - Liu, C. W.

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AB - For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.

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