Interfacial characterization of ceo2-gatcd MOSFETs using gated-diode method and charge pumping technique

F. C. Chm, H. W. Chen, C. H. Chen, C. H. Liu, S. Y. Chen, B. S. Huang, Z. Y. Hsieh, H. S. Huang, H. L. Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science