Interfacial characterization of ceo2-gatcd MOSFETs using gated-diode method and charge pumping technique

F. C. Chm; H. W. Chen; C. H. Chen; C. H. Liu; S. Y. Chen; B. S. Huang; Z. Y. Hsieh; H. S. Huang; H. L. Hwang

doi:10.1149/1.2981623

Interfacial characterization of ceo₂-gatcd MOSFETs using gated-diode method and charge pumping technique

F. C. Chm
, H. W. Chen
, C. H. Chen
, C. H. Liu
, S. Y. Chen
, B. S. Huang
, Z. Y. Hsieh
, H. S. Huang
, H. L. Hwang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating CeCO₂ dielectrics were fabricated and investigated. In this work, the interfacial and electrical properties of CeCO₂/Si were characterized by gated-diode method and charge pumping technique. The lowest density of interface traps per area and energy (D_it) of CeO₂/Si interface in comparison with other high-K material is about 7.3×10 ¹⁰ cm^-2-eV^-1 due to the very low lattice mismatch at CeCO₂/Si interface. The density of interface trap per area (N_it) determined using gated diode method is 6×10 ⁹ cm^-2. The minority carrier lifetime (τ _fIJ), the effective capture cross section of surface state (σ_s) and surface recombination velocity (s_o) extracted using gated-diode method are 4.09×10^-8 s, 7.14×10^-14 cm² and 4310 cm/s, respectively. Furthermore, a comparison with MOSFETs using the other high-K materials as gate dielectrics was also made.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Publisher	Electrochemical Society Inc.
Pages	423-432
Number of pages	10
Edition	5
ISBN (Print)	9781566776516
DOIs	https://doi.org/10.1149/1.2981623
Publication status	Published - 2009
Event	Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 13 → 2008 Oct 15

Publication series

Name	ECS Transactions
Number	5
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	2008/10/13 → 2008/10/15

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.2981623

Cite this

Chm, F. C., Chen, H. W., Chen, C. H., Liu, C. H., Chen, S. Y., Huang, B. S., Hsieh, Z. Y., Huang, H. S., & Hwang, H. L. (2009). Interfacial characterization of ceo₂-gatcd MOSFETs using gated-diode method and charge pumping technique. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 423-432). (ECS Transactions; Vol. 16, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/1.2981623

Interfacial characterization of ceo₂-gatcd MOSFETs using gated-diode method and charge pumping technique. / Chm, F. C.; Chen, H. W.; Chen, C. H. et al.
ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. Electrochemical Society Inc., 2009. p. 423-432 (ECS Transactions; Vol. 16, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chm, FC, Chen, HW, Chen, CH, Liu, CH, Chen, SY, Huang, BS, Hsieh, ZY, Huang, HS & Hwang, HL 2009, Interfacial characterization of ceo₂-gatcd MOSFETs using gated-diode method and charge pumping technique. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 edn, ECS Transactions, no. 5, vol. 16, Electrochemical Society Inc., pp. 423-432, Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting, Honolulu, HI, United States, 2008/10/13. https://doi.org/10.1149/1.2981623

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abstract = "Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating CeCO2 dielectrics were fabricated and investigated. In this work, the interfacial and electrical properties of CeCO2/Si were characterized by gated-diode method and charge pumping technique. The lowest density of interface traps per area and energy (Dit) of CeO2/Si interface in comparison with other high-K material is about 7.3×10 10 cm-2-eV-1 due to the very low lattice mismatch at CeCO2/Si interface. The density of interface trap per area (Nit) determined using gated diode method is 6×10 9 cm-2. The minority carrier lifetime (τ fIJ), the effective capture cross section of surface state (σs) and surface recombination velocity (so) extracted using gated-diode method are 4.09×10-8 s, 7.14×10-14 cm2 and 4310 cm/s, respectively. Furthermore, a comparison with MOSFETs using the other high-K materials as gate dielectrics was also made.",

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AU - Liu, C. H.

AU - Chen, S. Y.

AU - Huang, B. S.

AU - Hsieh, Z. Y.

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AU - Hwang, H. L.

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AB - Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating CeCO2 dielectrics were fabricated and investigated. In this work, the interfacial and electrical properties of CeCO2/Si were characterized by gated-diode method and charge pumping technique. The lowest density of interface traps per area and energy (Dit) of CeO2/Si interface in comparison with other high-K material is about 7.3×10 10 cm-2-eV-1 due to the very low lattice mismatch at CeCO2/Si interface. The density of interface trap per area (Nit) determined using gated diode method is 6×10 9 cm-2. The minority carrier lifetime (τ fIJ), the effective capture cross section of surface state (σs) and surface recombination velocity (so) extracted using gated-diode method are 4.09×10-8 s, 7.14×10-14 cm2 and 4310 cm/s, respectively. Furthermore, a comparison with MOSFETs using the other high-K materials as gate dielectrics was also made.

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