Interfacial characterization of ceo2-gatcd MOSFETs using gated-diode method and charge pumping technique

F. C. Chm; H. W. Chen; C. H. Chen; C. H. Liu; S. Y. Chen; B. S. Huang; Z. Y. Hsieh; H. S. Huang; H. L. Hwang

doi:10.1149/1.2981623

Interfacial characterization of ceo₂-gatcd MOSFETs using gated-diode method and charge pumping technique

F. C. Chm, H. W. Chen, C. H. Chen, C. H. Liu, S. Y. Chen, B. S. Huang, Z. Y. Hsieh, H. S. Huang, H. L. Hwang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating CeCO₂ dielectrics were fabricated and investigated. In this work, the interfacial and electrical properties of CeCO₂/Si were characterized by gated-diode method and charge pumping technique. The lowest density of interface traps per area and energy (D_it) of CeO₂/Si interface in comparison with other high-K material is about 7.3×10 ¹⁰ cm^-2-eV^-1 due to the very low lattice mismatch at CeCO₂/Si interface. The density of interface trap per area (N_it) determined using gated diode method is 6×10 ⁹ cm^-2. The minority carrier lifetime (τ _fIJ), the effective capture cross section of surface state (σ_s) and surface recombination velocity (s_o) extracted using gated-diode method are 4.09×10^-8 s, 7.14×10^-14 cm² and 4310 cm/s, respectively. Furthermore, a comparison with MOSFETs using the other high-K materials as gate dielectrics was also made.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Publisher	Electrochemical Society Inc.
Pages	423-432
Number of pages	10
Edition	5
ISBN (Print)	9781566776516
DOIs	https://doi.org/10.1149/1.2981623
Publication status	Published - 2009
Event	Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 13 → 2008 Oct 15

Publication series

Name	ECS Transactions
Number	5
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	2008/10/13 → 2008/10/15

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.2981623

Cite this

Chm, F. C., Chen, H. W., Chen, C. H., Liu, C. H., Chen, S. Y., Huang, B. S., Hsieh, Z. Y., Huang, H. S., & Hwang, H. L. (2009). Interfacial characterization of ceo₂-gatcd MOSFETs using gated-diode method and charge pumping technique. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 423-432). (ECS Transactions; Vol. 16, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/1.2981623

Interfacial characterization of ceo₂-gatcd MOSFETs using gated-diode method and charge pumping technique. / Chm, F. C.; Chen, H. W.; Chen, C. H. et al.
ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. Electrochemical Society Inc., 2009. p. 423-432 (ECS Transactions; Vol. 16, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chm, FC, Chen, HW, Chen, CH, Liu, CH, Chen, SY, Huang, BS, Hsieh, ZY, Huang, HS & Hwang, HL 2009, Interfacial characterization of ceo₂-gatcd MOSFETs using gated-diode method and charge pumping technique. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 edn, ECS Transactions, no. 5, vol. 16, Electrochemical Society Inc., pp. 423-432, Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting, Honolulu, HI, United States, 2008/10/13. https://doi.org/10.1149/1.2981623

@inproceedings{3937abc36618448dbe3a3e31a0589404,

title = "Interfacial characterization of ceo2-gatcd MOSFETs using gated-diode method and charge pumping technique",

abstract = "Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating CeCO2 dielectrics were fabricated and investigated. In this work, the interfacial and electrical properties of CeCO2/Si were characterized by gated-diode method and charge pumping technique. The lowest density of interface traps per area and energy (Dit) of CeO2/Si interface in comparison with other high-K material is about 7.3×10 10 cm-2-eV-1 due to the very low lattice mismatch at CeCO2/Si interface. The density of interface trap per area (Nit) determined using gated diode method is 6×10 9 cm-2. The minority carrier lifetime (τ fIJ), the effective capture cross section of surface state (σs) and surface recombination velocity (so) extracted using gated-diode method are 4.09×10-8 s, 7.14×10-14 cm2 and 4310 cm/s, respectively. Furthermore, a comparison with MOSFETs using the other high-K materials as gate dielectrics was also made.",

author = "Chm, {F. C.} and Chen, {H. W.} and Chen, {C. H.} and Liu, {C. H.} and Chen, {S. Y.} and Huang, {B. S.} and Hsieh, {Z. Y.} and Huang, {H. S.} and Hwang, {H. L.}",

year = "2009",

doi = "10.1149/1.2981623",

language = "English",

isbn = "9781566776516",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "5",

pages = "423--432",

booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6",

edition = "5",

note = "Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 15-10-2008",

}

TY - GEN

T1 - Interfacial characterization of ceo2-gatcd MOSFETs using gated-diode method and charge pumping technique

AU - Chm, F. C.

AU - Chen, H. W.

AU - Chen, C. H.

AU - Liu, C. H.

AU - Chen, S. Y.

AU - Huang, B. S.

AU - Hsieh, Z. Y.

AU - Huang, H. S.

AU - Hwang, H. L.

PY - 2009

Y1 - 2009

N2 - Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating CeCO2 dielectrics were fabricated and investigated. In this work, the interfacial and electrical properties of CeCO2/Si were characterized by gated-diode method and charge pumping technique. The lowest density of interface traps per area and energy (Dit) of CeO2/Si interface in comparison with other high-K material is about 7.3×10 10 cm-2-eV-1 due to the very low lattice mismatch at CeCO2/Si interface. The density of interface trap per area (Nit) determined using gated diode method is 6×10 9 cm-2. The minority carrier lifetime (τ fIJ), the effective capture cross section of surface state (σs) and surface recombination velocity (so) extracted using gated-diode method are 4.09×10-8 s, 7.14×10-14 cm2 and 4310 cm/s, respectively. Furthermore, a comparison with MOSFETs using the other high-K materials as gate dielectrics was also made.

AB - Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating CeCO2 dielectrics were fabricated and investigated. In this work, the interfacial and electrical properties of CeCO2/Si were characterized by gated-diode method and charge pumping technique. The lowest density of interface traps per area and energy (Dit) of CeO2/Si interface in comparison with other high-K material is about 7.3×10 10 cm-2-eV-1 due to the very low lattice mismatch at CeCO2/Si interface. The density of interface trap per area (Nit) determined using gated diode method is 6×10 9 cm-2. The minority carrier lifetime (τ fIJ), the effective capture cross section of surface state (σs) and surface recombination velocity (so) extracted using gated-diode method are 4.09×10-8 s, 7.14×10-14 cm2 and 4310 cm/s, respectively. Furthermore, a comparison with MOSFETs using the other high-K materials as gate dielectrics was also made.

UR - http://www.scopus.com/inward/record.url?scp=63449132579&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63449132579&partnerID=8YFLogxK

U2 - 10.1149/1.2981623

DO - 10.1149/1.2981623

M3 - Conference contribution

AN - SCOPUS:63449132579

SN - 9781566776516

T3 - ECS Transactions

SP - 423

EP - 432

BT - ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6

PB - Electrochemical Society Inc.

T2 - Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting

Y2 - 13 October 2008 through 15 October 2008

ER -