Interfacial characterization of ceo2-gatcd MOSFETs using gated-diode method and charge pumping technique

F. C. Chm, H. W. Chen, C. H. Chen, C. H. Liu, S. Y. Chen, B. S. Huang, Z. Y. Hsieh, H. S. Huang, H. L. Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating CeCO2 dielectrics were fabricated and investigated. In this work, the interfacial and electrical properties of CeCO2/Si were characterized by gated-diode method and charge pumping technique. The lowest density of interface traps per area and energy (Dit) of CeO2/Si interface in comparison with other high-K material is about 7.3×10 10 cm-2-eV-1 due to the very low lattice mismatch at CeCO2/Si interface. The density of interface trap per area (Nit) determined using gated diode method is 6×10 9 cm-2. The minority carrier lifetime (τ fIJ), the effective capture cross section of surface state (σs) and surface recombination velocity (so) extracted using gated-diode method are 4.09×10-8 s, 7.14×10-14 cm2 and 4310 cm/s, respectively. Furthermore, a comparison with MOSFETs using the other high-K materials as gate dielectrics was also made.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Pages423-432
Number of pages10
Edition5
DOIs
Publication statusPublished - 2008
EventPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 15

Publication series

NameECS Transactions
Number5
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/15

ASJC Scopus subject areas

  • Engineering(all)

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    Chm, F. C., Chen, H. W., Chen, C. H., Liu, C. H., Chen, S. Y., Huang, B. S., Hsieh, Z. Y., Huang, H. S., & Hwang, H. L. (2008). Interfacial characterization of ceo2-gatcd MOSFETs using gated-diode method and charge pumping technique. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 423-432). (ECS Transactions; Vol. 16, No. 5). https://doi.org/10.1149/1.2981623