Interfacial and electrical characterization of hfo2-gated MOSCs and MOSFETs by C-V and gated-diode method

S. Y. Chen; H. W. Chen; C. H. Chen; F. C. Chiu; C. H. Liu; Z. Y. Hsieh; H. S. Huang; H. L. Hwang

doi:10.1149/1.2981594

Interfacial and electrical characterization of hfo₂-gated MOSCs and MOSFETs by C-V and gated-diode method

S. Y. Chen, H. W. Chen, C. H. Chen, F. C. Chiu, C. H. Liu, Z. Y. Hsieh, H. S. Huang, H. L. Hwang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

Metal-oxide-semiconductor capacitors (MOSCs) and Metal-oxidesemiconductor field-effect transistors (MOSFETs) incorporating hafnium dioxide (HfO ₂) dielectrics were fabricated and investigated. The electrical and interfacial properties were characterized including C-V, I_ds-V _gs, the mean density of interface traps per unit area and energy (D̄_it,), energy of interface traps density distribution, interface traps density (N_it), density of near-interface oxide traps per unit area (N_niot), effective capture cross-section area (σ_s,), minority carrier lifetime (τ_fij) and surface recombination velocity (s_o) were studied. Furthermore, a comparison with MOSFETs using conventional SiO₂ as gate dielectrics was also made.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Publisher	Electrochemical Society Inc.
Pages	131-138
Number of pages	8
Edition	5
ISBN (Print)	9781566776516
DOIs	https://doi.org/10.1149/1.2981594
Publication status	Published - 2009
Event	Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 13 → 2008 Oct 15

Publication series

Name	ECS Transactions
Number	5
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	2008/10/13 → 2008/10/15

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2981594

Cite this

Chen, S. Y., Chen, H. W., Chen, C. H., Chiu, F. C., Liu, C. H., Hsieh, Z. Y., Huang, H. S., & Hwang, H. L. (2009). Interfacial and electrical characterization of hfo₂-gated MOSCs and MOSFETs by C-V and gated-diode method. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 131-138). (ECS Transactions; Vol. 16, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/1.2981594

Interfacial and electrical characterization of hfo₂-gated MOSCs and MOSFETs by C-V and gated-diode method. / Chen, S. Y.; Chen, H. W.; Chen, C. H. et al.
ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. Electrochemical Society Inc., 2009. p. 131-138 (ECS Transactions; Vol. 16, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, SY, Chen, HW, Chen, CH, Chiu, FC, Liu, CH, Hsieh, ZY, Huang, HS & Hwang, HL 2009, Interfacial and electrical characterization of hfo₂-gated MOSCs and MOSFETs by C-V and gated-diode method. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 edn, ECS Transactions, no. 5, vol. 16, Electrochemical Society Inc., pp. 131-138, Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting, Honolulu, HI, United States, 2008/10/13. https://doi.org/10.1149/1.2981594

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title = "Interfacial and electrical characterization of hfo2-gated MOSCs and MOSFETs by C-V and gated-diode method",

abstract = "Metal-oxide-semiconductor capacitors (MOSCs) and Metal-oxidesemiconductor field-effect transistors (MOSFETs) incorporating hafnium dioxide (HfO 2) dielectrics were fabricated and investigated. The electrical and interfacial properties were characterized including C-V, Ids-V gs, the mean density of interface traps per unit area and energy ({\=D}it,), energy of interface traps density distribution, interface traps density (Nit), density of near-interface oxide traps per unit area (Nniot), effective capture cross-section area (σs,), minority carrier lifetime (τfij) and surface recombination velocity (so) were studied. Furthermore, a comparison with MOSFETs using conventional SiO2 as gate dielectrics was also made.",

author = "Chen, {S. Y.} and Chen, {H. W.} and Chen, {C. H.} and Chiu, {F. C.} and Liu, {C. H.} and Hsieh, {Z. Y.} and Huang, {H. S.} and Hwang, {H. L.}",

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AB - Metal-oxide-semiconductor capacitors (MOSCs) and Metal-oxidesemiconductor field-effect transistors (MOSFETs) incorporating hafnium dioxide (HfO 2) dielectrics were fabricated and investigated. The electrical and interfacial properties were characterized including C-V, Ids-V gs, the mean density of interface traps per unit area and energy (D̄it,), energy of interface traps density distribution, interface traps density (Nit), density of near-interface oxide traps per unit area (Nniot), effective capture cross-section area (σs,), minority carrier lifetime (τfij) and surface recombination velocity (so) were studied. Furthermore, a comparison with MOSFETs using conventional SiO2 as gate dielectrics was also made.

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