Interfacial and electrical characterization of hfo 2 -gated MOSCs and MOSFETs by C-V and gated-diode method

S. Y. Chen, H. W. Chen, C. H. Chen, F. C. Chiu, Chuan-Hsi Liu, Z. Y. Hsieh, H. S. Huang, H. L. Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Metal-oxide-semiconductor capacitors (MOSCs) and Metal-oxidesemiconductor field-effect transistors (MOSFETs) incorporating hafnium dioxide (HfO 2 ) dielectrics were fabricated and investigated. The electrical and interfacial properties were characterized including C-V, I ds -V gs , the mean density of interface traps per unit area and energy (D̄ it ,), energy of interface traps density distribution, interface traps density (N it ), density of near-interface oxide traps per unit area (N niot ), effective capture cross-section area (σ s ,), minority carrier lifetime (τ fij ) and surface recombination velocity (s o ) were studied. Furthermore, a comparison with MOSFETs using conventional SiO 2 as gate dielectrics was also made.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Pages131-138
Number of pages8
Edition5
DOIs
Publication statusPublished - 2008 Dec 1
EventPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 15

Publication series

NameECS Transactions
Number5
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/15

Fingerprint

Field effect transistors
Diodes
Capacitors
Metals
Hafnium
Carrier lifetime
Gate dielectrics
Oxides
Oxide semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chen, S. Y., Chen, H. W., Chen, C. H., Chiu, F. C., Liu, C-H., Hsieh, Z. Y., ... Hwang, H. L. (2008). Interfacial and electrical characterization of hfo 2 -gated MOSCs and MOSFETs by C-V and gated-diode method In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 131-138). (ECS Transactions; Vol. 16, No. 5). https://doi.org/10.1149/1.2981594

Interfacial and electrical characterization of hfo 2 -gated MOSCs and MOSFETs by C-V and gated-diode method . / Chen, S. Y.; Chen, H. W.; Chen, C. H.; Chiu, F. C.; Liu, Chuan-Hsi; Hsieh, Z. Y.; Huang, H. S.; Hwang, H. L.

ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. 2008. p. 131-138 (ECS Transactions; Vol. 16, No. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, SY, Chen, HW, Chen, CH, Chiu, FC, Liu, C-H, Hsieh, ZY, Huang, HS & Hwang, HL 2008, Interfacial and electrical characterization of hfo 2 -gated MOSCs and MOSFETs by C-V and gated-diode method in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 edn, ECS Transactions, no. 5, vol. 16, pp. 131-138, Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting, Honolulu, HI, United States, 08/10/13. https://doi.org/10.1149/1.2981594
Chen SY, Chen HW, Chen CH, Chiu FC, Liu C-H, Hsieh ZY et al. Interfacial and electrical characterization of hfo 2 -gated MOSCs and MOSFETs by C-V and gated-diode method In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 ed. 2008. p. 131-138. (ECS Transactions; 5). https://doi.org/10.1149/1.2981594
Chen, S. Y. ; Chen, H. W. ; Chen, C. H. ; Chiu, F. C. ; Liu, Chuan-Hsi ; Hsieh, Z. Y. ; Huang, H. S. ; Hwang, H. L. / Interfacial and electrical characterization of hfo 2 -gated MOSCs and MOSFETs by C-V and gated-diode method ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. 2008. pp. 131-138 (ECS Transactions; 5).
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