Interfacial and electrical characterization of hfo2-gated MOSCs and MOSFETs by C-V and gated-diode method

S. Y. Chen, H. W. Chen, C. H. Chen, F. C. Chiu, C. H. Liu, Z. Y. Hsieh, H. S. Huang, H. L. Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Metal-oxide-semiconductor capacitors (MOSCs) and Metal-oxidesemiconductor field-effect transistors (MOSFETs) incorporating hafnium dioxide (HfO 2) dielectrics were fabricated and investigated. The electrical and interfacial properties were characterized including C-V, Ids-V gs, the mean density of interface traps per unit area and energy (D̄it,), energy of interface traps density distribution, interface traps density (Nit), density of near-interface oxide traps per unit area (Nniot), effective capture cross-section area (σs,), minority carrier lifetime (τfij) and surface recombination velocity (so) were studied. Furthermore, a comparison with MOSFETs using conventional SiO2 as gate dielectrics was also made.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
PublisherElectrochemical Society Inc.
Pages131-138
Number of pages8
Edition5
ISBN (Print)9781566776516
DOIs
Publication statusPublished - 2009
EventPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 15

Publication series

NameECS Transactions
Number5
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period2008/10/132008/10/15

ASJC Scopus subject areas

  • Engineering(all)

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