Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Yu Chien Chiu; Chun Hu Cheng; Chia Chi Fan; Po Chun Chen; Chun Yen Chang; Min Hung Lee; Chien Liu; Shiang Shiou Yen; Hsiao Hsuan Hsu

doi:10.1109/DRC.2015.7175543

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Yu Chien Chiu, Chun Hu Cheng, Chia Chi Fan, Po Chun Chen, Chun Yen Chang, Min Hung Lee, Chien Liu, Shiang Shiou Yen, Hsiao Hsuan Hsu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A nearly ideal subthreshold slope (SS_min ∼58mV/dec) and an ultralow off-state current of 10^-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔV_T window during endurance cycling may be affected by interface polarization fluctuation.

Original language	English
Title of host publication	73rd Annual Device Research Conference, DRC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	41-42
Number of pages	2
ISBN (Electronic)	9781467381345
DOIs	https://doi.org/10.1109/DRC.2015.7175543
Publication status	Published - 2015 Aug 3
Event	73rd Annual Device Research Conference, DRC 2015 - Columbus, United States Duration: 2015 Jun 21 → 2015 Jun 24

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2015-August
ISSN (Print)	1548-3770

Other

Other	73rd Annual Device Research Conference, DRC 2015
Country/Territory	United States
City	Columbus
Period	2015/06/21 → 2015/06/24

Keywords

Clocks
Fluctuations
High K dielectric materials
Logic gates
Switches
Transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2015.7175543

Cite this

Chiu, Y. C., Cheng, C. H., Fan, C. C., Chen, P. C., Chang, C. Y., Lee, M. H., Liu, C., Yen, S. S., & Hsu, H. H. (2015). Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. In 73rd Annual Device Research Conference, DRC 2015 (pp. 41-42). Article 7175543 (Device Research Conference - Conference Digest, DRC; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175543

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. / Chiu, Yu Chien; Cheng, Chun Hu; Fan, Chia Chi et al.
73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 41-42 7175543 (Device Research Conference - Conference Digest, DRC; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chiu, YC, Cheng, CH, Fan, CC, Chen, PC, Chang, CY, Lee, MH, Liu, C, Yen, SS & Hsu, HH 2015, Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. in 73rd Annual Device Research Conference, DRC 2015., 7175543, Device Research Conference - Conference Digest, DRC, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 41-42, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 2015/06/21. https://doi.org/10.1109/DRC.2015.7175543

Chiu YC, Cheng CH, Fan CC, Chen PC, Chang CY, Lee MH et al. Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. In 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 41-42. 7175543. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2015.7175543

Chiu, Yu Chien ; Cheng, Chun Hu ; Fan, Chia Chi et al. / Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 41-42 (Device Research Conference - Conference Digest, DRC).

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abstract = "A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.",

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AU - Chang, Chun Yen

AU - Lee, Min Hung

AU - Liu, Chien

AU - Yen, Shiang Shiou

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AB - A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.

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Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Abstract

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