Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Yu Chien Chiu; Chun-Hu Cheng; Chia Chi Fan; Po Chun Chen; Chun Yen Chang; Min-Hung Lee; Chien Liu; Shiang Shiou Yen; Hsiao Hsuan Hsu

doi:10.1109/DRC.2015.7175543

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Yu Chien Chiu, Chun-Hu Cheng, Chia Chi Fan, Po Chun Chen, Chun Yen Chang, Min-Hung Lee, Chien Liu, Shiang Shiou Yen, Hsiao Hsuan Hsu

Department of Mechartronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A nearly ideal subthreshold slope (SS_min ∼58mV/dec) and an ultralow off-state current of 10^-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔV_T window during endurance cycling may be affected by interface polarization fluctuation.

Original language	English
Title of host publication	73rd Annual Device Research Conference, DRC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	41-42
Number of pages	2
ISBN (Electronic)	9781467381345
DOIs	https://doi.org/10.1109/DRC.2015.7175543
Publication status	Published - 2015 Aug 3
Event	73rd Annual Device Research Conference, DRC 2015 - Columbus, United States Duration: 2015 Jun 21 → 2015 Jun 24

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2015-August
ISSN (Print)	1548-3770

Other

Other	73rd Annual Device Research Conference, DRC 2015
Country	United States
City	Columbus
Period	2015/06/21 → 2015/06/24

Keywords

Clocks
Fluctuations
High K dielectric materials
Logic gates
Switches
Transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2015.7175543

Fingerprint Dive into the research topics of 'Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope'. Together they form a unique fingerprint.

Cite this

Chiu, Y. C., Cheng, C-H., Fan, C. C., Chen, P. C., Chang, C. Y., Lee, M-H., Liu, C., Yen, S. S., & Hsu, H. H. (2015). Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. In 73rd Annual Device Research Conference, DRC 2015 (pp. 41-42). [7175543] (Device Research Conference - Conference Digest, DRC; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175543

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. / Chiu, Yu Chien; Cheng, Chun-Hu; Fan, Chia Chi; Chen, Po Chun; Chang, Chun Yen; Lee, Min-Hung; Liu, Chien; Yen, Shiang Shiou; Hsu, Hsiao Hsuan.

73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 41-42 7175543 (Device Research Conference - Conference Digest, DRC; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chiu, YC, Cheng, C-H, Fan, CC, Chen, PC, Chang, CY, Lee, M-H, Liu, C, Yen, SS & Hsu, HH 2015, Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. in 73rd Annual Device Research Conference, DRC 2015., 7175543, Device Research Conference - Conference Digest, DRC, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 41-42, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 2015/06/21. https://doi.org/10.1109/DRC.2015.7175543

Chiu YC, Cheng C-H, Fan CC, Chen PC, Chang CY, Lee M-H et al. Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. In 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 41-42. 7175543. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2015.7175543

Chiu, Yu Chien ; Cheng, Chun-Hu ; Fan, Chia Chi ; Chen, Po Chun ; Chang, Chun Yen ; Lee, Min-Hung ; Liu, Chien ; Yen, Shiang Shiou ; Hsu, Hsiao Hsuan. / Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 41-42 (Device Research Conference - Conference Digest, DRC).

@inproceedings{0b2ebb40cae842c69b3c50ff3697da0b,

title = "Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope",

abstract = "A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.",

keywords = "Clocks, Fluctuations, High K dielectric materials, Logic gates, Switches, Transistors",

author = "Chiu, {Yu Chien} and Chun-Hu Cheng and Fan, {Chia Chi} and Chen, {Po Chun} and Chang, {Chun Yen} and Min-Hung Lee and Chien Liu and Yen, {Shiang Shiou} and Hsu, {Hsiao Hsuan}",

year = "2015",

month = aug,

day = "3",

doi = "10.1109/DRC.2015.7175543",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "41--42",

booktitle = "73rd Annual Device Research Conference, DRC 2015",

note = "73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",

}

TY - GEN

T1 - Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

AU - Chiu, Yu Chien

AU - Cheng, Chun-Hu

AU - Fan, Chia Chi

AU - Chen, Po Chun

AU - Chang, Chun Yen

AU - Lee, Min-Hung

AU - Liu, Chien

AU - Yen, Shiang Shiou

AU - Hsu, Hsiao Hsuan

PY - 2015/8/3

Y1 - 2015/8/3

N2 - A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.

AB - A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.

KW - Clocks

KW - Fluctuations

KW - High K dielectric materials

KW - Logic gates

KW - Switches

KW - Transistors

UR - http://www.scopus.com/inward/record.url?scp=84957667498&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957667498&partnerID=8YFLogxK

U2 - 10.1109/DRC.2015.7175543

DO - 10.1109/DRC.2015.7175543

M3 - Conference contribution

AN - SCOPUS:84957667498

T3 - Device Research Conference - Conference Digest, DRC

SP - 41

EP - 42

BT - 73rd Annual Device Research Conference, DRC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 73rd Annual Device Research Conference, DRC 2015

Y2 - 21 June 2015 through 24 June 2015

ER -