Abstract
A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.
| Original language | English |
|---|---|
| Title of host publication | 73rd Annual Device Research Conference, DRC 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 41-42 |
| Number of pages | 2 |
| ISBN (Electronic) | 9781467381345 |
| DOIs | |
| Publication status | Published - 2015 Aug 3 |
| Event | 73rd Annual Device Research Conference, DRC 2015 - Columbus, United States Duration: 2015 Jun 21 → 2015 Jun 24 |
Publication series
| Name | Device Research Conference - Conference Digest, DRC |
|---|---|
| Volume | 2015-August |
| ISSN (Print) | 1548-3770 |
Other
| Other | 73rd Annual Device Research Conference, DRC 2015 |
|---|---|
| Country | United States |
| City | Columbus |
| Period | 15/6/21 → 15/6/24 |
Fingerprint
Keywords
- Clocks
- Fluctuations
- High K dielectric materials
- Logic gates
- Switches
- Transistors
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. / Chiu, Yu Chien; Cheng, Chun-Hu; Fan, Chia Chi; Chen, Po Chun; Chang, Chun Yen; Lee, Min-Hung; Liu, Chien; Yen, Shiang Shiou; Hsu, Hsiao Hsuan.
73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 41-42 7175543 (Device Research Conference - Conference Digest, DRC; Vol. 2015-August).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope
AU - Chiu, Yu Chien
AU - Cheng, Chun-Hu
AU - Fan, Chia Chi
AU - Chen, Po Chun
AU - Chang, Chun Yen
AU - Lee, Min-Hung
AU - Liu, Chien
AU - Yen, Shiang Shiou
AU - Hsu, Hsiao Hsuan
PY - 2015/8/3
Y1 - 2015/8/3
N2 - A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.
AB - A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.
KW - Clocks
KW - Fluctuations
KW - High K dielectric materials
KW - Logic gates
KW - Switches
KW - Transistors
UR - http://www.scopus.com/inward/record.url?scp=84957667498&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84957667498&partnerID=8YFLogxK
U2 - 10.1109/DRC.2015.7175543
DO - 10.1109/DRC.2015.7175543
M3 - Conference contribution
AN - SCOPUS:84957667498
T3 - Device Research Conference - Conference Digest, DRC
SP - 41
EP - 42
BT - 73rd Annual Device Research Conference, DRC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -