Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Yu Chien Chiu, Chun-Hu Cheng, Chia Chi Fan, Po Chun Chen, Chun Yen Chang, Min-Hung Lee, Chien Liu, Shiang Shiou Yen, Hsiao Hsuan Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages41-42
Number of pages2
ISBN (Electronic)9781467381345
DOIs
Publication statusPublished - 2015 Aug 3
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 2015 Jun 212015 Jun 24

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2015-August
ISSN (Print)1548-3770

Other

Other73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period15/6/2115/6/24

Fingerprint

Hafnium
Zirconia
Ferroelectric materials
Polarization
Data storage equipment
Interface states
Relaxation time
Durability

Keywords

  • Clocks
  • Fluctuations
  • High K dielectric materials
  • Logic gates
  • Switches
  • Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chiu, Y. C., Cheng, C-H., Fan, C. C., Chen, P. C., Chang, C. Y., Lee, M-H., ... Hsu, H. H. (2015). Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. In 73rd Annual Device Research Conference, DRC 2015 (pp. 41-42). [7175543] (Device Research Conference - Conference Digest, DRC; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175543

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. / Chiu, Yu Chien; Cheng, Chun-Hu; Fan, Chia Chi; Chen, Po Chun; Chang, Chun Yen; Lee, Min-Hung; Liu, Chien; Yen, Shiang Shiou; Hsu, Hsiao Hsuan.

73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 41-42 7175543 (Device Research Conference - Conference Digest, DRC; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chiu, YC, Cheng, C-H, Fan, CC, Chen, PC, Chang, CY, Lee, M-H, Liu, C, Yen, SS & Hsu, HH 2015, Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. in 73rd Annual Device Research Conference, DRC 2015., 7175543, Device Research Conference - Conference Digest, DRC, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 41-42, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 15/6/21. https://doi.org/10.1109/DRC.2015.7175543
Chiu YC, Cheng C-H, Fan CC, Chen PC, Chang CY, Lee M-H et al. Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. In 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 41-42. 7175543. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2015.7175543
Chiu, Yu Chien ; Cheng, Chun-Hu ; Fan, Chia Chi ; Chen, Po Chun ; Chang, Chun Yen ; Lee, Min-Hung ; Liu, Chien ; Yen, Shiang Shiou ; Hsu, Hsiao Hsuan. / Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 41-42 (Device Research Conference - Conference Digest, DRC).
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