Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement

Chia Chi Fan; Chun Yuan Tu; Ming Huei Lin; Chun Yen Chang; Chun Hu Cheng; Yen Liang Chen; Guan Lin Liou; Chien Liu; Wu Ching Chou; Hsiao Hsuan Hsu

doi:10.1109/IRPS.2018.8353703

Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement

Chia Chi Fan, Chun Yuan Tu, Ming Huei Lin, Chun Yen Chang, Chun Hu Cheng, Yen Liang Chen, Guan Lin Liou, Chien Liu, Wu Ching Chou, Hsiao Hsuan Hsu

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

In this work, we successfully achieve a hysteresis-free negative capacitance field effect transistors (NCFETs) by exploiting a defect passivation scheme. This research work simultaneously provides a new insight into the gate-oxide stress reliability of NCFET. The fluorine-passivated HfAlOx NCFET shows the excellent transistor characteristics including a steep subthreshold swing of sub-30-mV/dec, a negligible hysteresis-free switch of ∼10mV and a large on/off current reatio (I_on/I_off) of >10⁷. Most importantly, fluorine passivation for NC HfAlOx effectively suppress the generation of shallow traps during electrical stress test. Besides, it is favorable to maintain NC operation and SILC immunity by in-situ fluorine passivation, which has been verified by transient pulse I-V measurement.

Original language	English
Title of host publication	2018 IEEE International Reliability Physics Symposium, IRPS 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	PTX.81-PTX.85
ISBN (Electronic)	9781538654798
DOIs	https://doi.org/10.1109/IRPS.2018.8353703
Publication status	Published - 2018 May 25
Event	2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States Duration: 2018 Mar 11 → 2018 Mar 15

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2018-March
ISSN (Print)	1541-7026

Other

Other	2018 IEEE International Reliability Physics Symposium, IRPS 2018
Country/Territory	United States
City	Burlingame
Period	2018/03/11 → 2018/03/15

Keywords

Ferroelectric
HfAlO
Negative Capacitance

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/IRPS.2018.8353703

Cite this

Fan, C. C., Tu, C. Y., Lin, M. H., Chang, C. Y., Cheng, C. H., Chen, Y. L., Liou, G. L., Liu, C., Chou, W. C., & Hsu, H. H. (2018). Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. In 2018 IEEE International Reliability Physics Symposium, IRPS 2018 (pp. PTX.81-PTX.85). (IEEE International Reliability Physics Symposium Proceedings; Vol. 2018-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2018.8353703

Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. / Fan, Chia Chi; Tu, Chun Yuan; Lin, Ming Huei et al.
2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. PTX.81-PTX.85 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fan, CC, Tu, CY, Lin, MH, Chang, CY, Cheng, CH, Chen, YL, Liou, GL, Liu, C, Chou, WC & Hsu, HH 2018, Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. in 2018 IEEE International Reliability Physics Symposium, IRPS 2018. IEEE International Reliability Physics Symposium Proceedings, vol. 2018-March, Institute of Electrical and Electronics Engineers Inc., pp. PTX.81-PTX.85, 2018 IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, United States, 2018/03/11. https://doi.org/10.1109/IRPS.2018.8353703

Fan CC, Tu CY, Lin MH, Chang CY, Cheng CH, Chen YL et al. Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. In 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. PTX.81-PTX.85. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2018.8353703

Fan, Chia Chi ; Tu, Chun Yuan ; Lin, Ming Huei et al. / Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. PTX.81-PTX.85 (IEEE International Reliability Physics Symposium Proceedings).

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title = "Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement",

abstract = "In this work, we successfully achieve a hysteresis-free negative capacitance field effect transistors (NCFETs) by exploiting a defect passivation scheme. This research work simultaneously provides a new insight into the gate-oxide stress reliability of NCFET. The fluorine-passivated HfAlOx NCFET shows the excellent transistor characteristics including a steep subthreshold swing of sub-30-mV/dec, a negligible hysteresis-free switch of ∼10mV and a large on/off current reatio (Ion/Ioff) of >107. Most importantly, fluorine passivation for NC HfAlOx effectively suppress the generation of shallow traps during electrical stress test. Besides, it is favorable to maintain NC operation and SILC immunity by in-situ fluorine passivation, which has been verified by transient pulse I-V measurement.",

keywords = "Ferroelectric, HfAlO, Negative Capacitance",

author = "Fan, {Chia Chi} and Tu, {Chun Yuan} and Lin, {Ming Huei} and Chang, {Chun Yen} and Cheng, {Chun Hu} and Chen, {Yen Liang} and Liou, {Guan Lin} and Chien Liu and Chou, {Wu Ching} and Hsu, {Hsiao Hsuan}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Reliability Physics Symposium, IRPS 2018 ; Conference date: 11-03-2018 Through 15-03-2018",

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AU - Fan, Chia Chi

AU - Tu, Chun Yuan

AU - Lin, Ming Huei

AU - Chang, Chun Yen

AU - Cheng, Chun Hu

AU - Chen, Yen Liang

AU - Liou, Guan Lin

AU - Liu, Chien

AU - Chou, Wu Ching

AU - Hsu, Hsiao Hsuan

PY - 2018/5/25

Y1 - 2018/5/25

N2 - In this work, we successfully achieve a hysteresis-free negative capacitance field effect transistors (NCFETs) by exploiting a defect passivation scheme. This research work simultaneously provides a new insight into the gate-oxide stress reliability of NCFET. The fluorine-passivated HfAlOx NCFET shows the excellent transistor characteristics including a steep subthreshold swing of sub-30-mV/dec, a negligible hysteresis-free switch of ∼10mV and a large on/off current reatio (Ion/Ioff) of >107. Most importantly, fluorine passivation for NC HfAlOx effectively suppress the generation of shallow traps during electrical stress test. Besides, it is favorable to maintain NC operation and SILC immunity by in-situ fluorine passivation, which has been verified by transient pulse I-V measurement.

AB - In this work, we successfully achieve a hysteresis-free negative capacitance field effect transistors (NCFETs) by exploiting a defect passivation scheme. This research work simultaneously provides a new insight into the gate-oxide stress reliability of NCFET. The fluorine-passivated HfAlOx NCFET shows the excellent transistor characteristics including a steep subthreshold swing of sub-30-mV/dec, a negligible hysteresis-free switch of ∼10mV and a large on/off current reatio (Ion/Ioff) of >107. Most importantly, fluorine passivation for NC HfAlOx effectively suppress the generation of shallow traps during electrical stress test. Besides, it is favorable to maintain NC operation and SILC immunity by in-situ fluorine passivation, which has been verified by transient pulse I-V measurement.

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Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement

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