Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement

Chia Chi Fan, Chun Yuan Tu, Ming Huei Lin, Chun Yen Chang, Chun-Hu Cheng, Yen Liang Chen, Guan Lin Liou, Chien Liu, Wu Ching Chou, Hsiao Hsuan Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we successfully achieve a hysteresis-free negative capacitance field effect transistors (NCFETs) by exploiting a defect passivation scheme. This research work simultaneously provides a new insight into the gate-oxide stress reliability of NCFET. The fluorine-passivated HfAlOx NCFET shows the excellent transistor characteristics including a steep subthreshold swing of sub-30-mV/dec, a negligible hysteresis-free switch of ∼10mV and a large on/off current reatio (Ion/Ioff) of >107. Most importantly, fluorine passivation for NC HfAlOx effectively suppress the generation of shallow traps during electrical stress test. Besides, it is favorable to maintain NC operation and SILC immunity by in-situ fluorine passivation, which has been verified by transient pulse I-V measurement.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesPTX.81-PTX.85
ISBN (Electronic)9781538654798
DOIs
Publication statusPublished - 2018 May 25
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 2018 Mar 112018 Mar 15

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Other

Other2018 IEEE International Reliability Physics Symposium, IRPS 2018
CountryUnited States
CityBurlingame
Period18/3/1118/3/15

Fingerprint

Field effect transistors
Fluorine
Passivation
Ferroelectric materials
Hysteresis
Capacitance
Switches
Transistors
Defects
Oxides
Ions

Keywords

  • Ferroelectric
  • HfAlO
  • Negative Capacitance

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Fan, C. C., Tu, C. Y., Lin, M. H., Chang, C. Y., Cheng, C-H., Chen, Y. L., ... Hsu, H. H. (2018). Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. In 2018 IEEE International Reliability Physics Symposium, IRPS 2018 (pp. PTX.81-PTX.85). (IEEE International Reliability Physics Symposium Proceedings; Vol. 2018-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2018.8353703

Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. / Fan, Chia Chi; Tu, Chun Yuan; Lin, Ming Huei; Chang, Chun Yen; Cheng, Chun-Hu; Chen, Yen Liang; Liou, Guan Lin; Liu, Chien; Chou, Wu Ching; Hsu, Hsiao Hsuan.

2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. PTX.81-PTX.85 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fan, CC, Tu, CY, Lin, MH, Chang, CY, Cheng, C-H, Chen, YL, Liou, GL, Liu, C, Chou, WC & Hsu, HH 2018, Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. in 2018 IEEE International Reliability Physics Symposium, IRPS 2018. IEEE International Reliability Physics Symposium Proceedings, vol. 2018-March, Institute of Electrical and Electronics Engineers Inc., pp. PTX.81-PTX.85, 2018 IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, United States, 18/3/11. https://doi.org/10.1109/IRPS.2018.8353703
Fan CC, Tu CY, Lin MH, Chang CY, Cheng C-H, Chen YL et al. Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. In 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. PTX.81-PTX.85. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2018.8353703
Fan, Chia Chi ; Tu, Chun Yuan ; Lin, Ming Huei ; Chang, Chun Yen ; Cheng, Chun-Hu ; Chen, Yen Liang ; Liou, Guan Lin ; Liu, Chien ; Chou, Wu Ching ; Hsu, Hsiao Hsuan. / Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. PTX.81-PTX.85 (IEEE International Reliability Physics Symposium Proceedings).
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abstract = "In this work, we successfully achieve a hysteresis-free negative capacitance field effect transistors (NCFETs) by exploiting a defect passivation scheme. This research work simultaneously provides a new insight into the gate-oxide stress reliability of NCFET. The fluorine-passivated HfAlOx NCFET shows the excellent transistor characteristics including a steep subthreshold swing of sub-30-mV/dec, a negligible hysteresis-free switch of ∼10mV and a large on/off current reatio (Ion/Ioff) of >107. Most importantly, fluorine passivation for NC HfAlOx effectively suppress the generation of shallow traps during electrical stress test. Besides, it is favorable to maintain NC operation and SILC immunity by in-situ fluorine passivation, which has been verified by transient pulse I-V measurement.",
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AU - Chen, Yen Liang

AU - Liou, Guan Lin

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