Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

Zhi Wei Zheng, Hsiao Hsuan Hsu, Chun Hu Cheng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution.

Original languageEnglish
Pages (from-to)100-104
Number of pages5
JournalPhysica Status Solidi - Rapid Research Letters
Issue number1
Publication statusPublished - 2014 Jan


  • GeO
  • RRAM
  • Resistive random access memory
  • TiO

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


Dive into the research topics of 'Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate'. Together they form a unique fingerprint.

Cite this