Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

Zhi Wei Zheng; Hsiao Hsuan Hsu; Chun Hu Cheng

doi:10.1002/pssr.201308143

Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

Zhi Wei Zheng, Hsiao Hsuan Hsu, Chun Hu Cheng^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, we report a low power Ni/GeO_x /TiO_y /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution.

Original language	English
Pages (from-to)	100-104
Number of pages	5
Journal	Physica Status Solidi - Rapid Research Letters
Volume	8
Issue number	1
DOIs	https://doi.org/10.1002/pssr.201308143
Publication status	Published - 2014 Jan

Keywords

GeO
RRAM
Resistive random access memory
TiO

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1002/pssr.201308143

Cite this

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abstract = "In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution.",

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N2 - In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution.

AB - In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution.

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Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

Abstract

Keywords

ASJC Scopus subject areas

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