Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

Zhi Wei Zheng, Hsiao Hsuan Hsu, Chun Hu Cheng

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution.

Original languageEnglish
Pages (from-to)100-104
Number of pages5
JournalPhysica Status Solidi - Rapid Research Letters
Volume8
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

polyimides
Polyimides
Interfaces (computer)
random access memory
current distribution
Plasmas
Data storage equipment
Electrodes
electrodes
Substrates
oxidation resistance
Oxidation resistance
Oxygen vacancies
Temperature
cycles
oxygen

Keywords

  • GeO
  • RRAM
  • Resistive random access memory
  • TiO

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate. / Zheng, Zhi Wei; Hsu, Hsiao Hsuan; Cheng, Chun Hu.

In: Physica Status Solidi - Rapid Research Letters, Vol. 8, No. 1, 01.01.2014, p. 100-104.

Research output: Contribution to journalArticle

@article{96266fcf149941f191bcf9587d2dd63a,
title = "Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate",
abstract = "In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4{\%} variation for the set) and good high-temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution.",
keywords = "GeO, RRAM, Resistive random access memory, TiO",
author = "Zheng, {Zhi Wei} and Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu}",
year = "2014",
month = "1",
day = "1",
doi = "10.1002/pssr.201308143",
language = "English",
volume = "8",
pages = "100--104",
journal = "Physica Status Solidi - Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

AU - Zheng, Zhi Wei

AU - Hsu, Hsiao Hsuan

AU - Cheng, Chun Hu

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution.

AB - In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution.

KW - GeO

KW - RRAM

KW - Resistive random access memory

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=84892881670&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892881670&partnerID=8YFLogxK

U2 - 10.1002/pssr.201308143

DO - 10.1002/pssr.201308143

M3 - Article

AN - SCOPUS:84892881670

VL - 8

SP - 100

EP - 104

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 1

ER -