Interface characterization and current conduction in HfO                         2                         -gated MOS capacitors

H. W. Chen; F. C. Chiu; C. H. Liu; S. Y. Chen; H. S. Huang; P. C. Juan; H. L. Hwang

doi:10.1016/j.apsusc.2008.02.191

Interface characterization and current conduction in HfO ₂ -gated MOS capacitors

H. W. Chen
, F. C. Chiu^*
, C. H. Liu
, S. Y. Chen
, H. S. Huang
, P. C. Juan
, H. L. Hwang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO ₂ ) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (over(D, ̄) _it ), energy distribution of interface traps density and near-interface oxide traps density (N _NIOT ) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10 ¹² cm ^-2 eV ^-1 by using high-low frequency capacitance method. The maximum D _it is about 7.76 × 10 ¹² cm ^-2 eV ^-1 located at 0.27 eV above the valence band.

Original language	English
Pages (from-to)	6112-6115
Number of pages	4
Journal	Applied Surface Science
Volume	254
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.191
Publication status	Published - 2008 Jul 30
Externally published	Yes

Keywords

HfO
High-κ
Interface traps density
Near-interface oxide traps

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2008.02.191

Cite this

@article{88ab4fac0e27498aa8937985da459382,

title = " Interface characterization and current conduction in HfO 2 -gated MOS capacitors ",

abstract = " Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO 2 ) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (over(D,{\= }) it ), energy distribution of interface traps density and near-interface oxide traps density (N NIOT ) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10 12 cm -2 eV -1 by using high-low frequency capacitance method. The maximum D it is about 7.76 × 10 12 cm -2 eV -1 located at 0.27 eV above the valence band.",

keywords = "HfO, High-κ, Interface traps density, Near-interface oxide traps",

author = "Chen, \{H. W.\} and Chiu, \{F. C.\} and Liu, \{C. H.\} and Chen, \{S. Y.\} and Huang, \{H. S.\} and Juan, \{P. C.\} and Hwang, \{H. L.\}",

year = "2008",

month = jul,

day = "30",

doi = "10.1016/j.apsusc.2008.02.191",

language = "English",

volume = "254",

pages = "6112--6115",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier BV",

number = "19",

}

TY - JOUR

T1 - Interface characterization and current conduction in HfO 2 -gated MOS capacitors

AU - Chen, H. W.

AU - Chiu, F. C.

AU - Liu, C. H.

AU - Chen, S. Y.

AU - Huang, H. S.

AU - Juan, P. C.

AU - Hwang, H. L.

PY - 2008/7/30

Y1 - 2008/7/30

N2 - Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO 2 ) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (over(D, ̄) it ), energy distribution of interface traps density and near-interface oxide traps density (N NIOT ) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10 12 cm -2 eV -1 by using high-low frequency capacitance method. The maximum D it is about 7.76 × 10 12 cm -2 eV -1 located at 0.27 eV above the valence band.

AB - Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO 2 ) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (over(D, ̄) it ), energy distribution of interface traps density and near-interface oxide traps density (N NIOT ) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10 12 cm -2 eV -1 by using high-low frequency capacitance method. The maximum D it is about 7.76 × 10 12 cm -2 eV -1 located at 0.27 eV above the valence band.

KW - HfO

KW - High-κ

KW - Interface traps density

KW - Near-interface oxide traps

UR - https://www.scopus.com/pages/publications/45049087838

UR - https://www.scopus.com/pages/publications/45049087838#tab=citedBy

U2 - 10.1016/j.apsusc.2008.02.191

DO - 10.1016/j.apsusc.2008.02.191

M3 - Article

AN - SCOPUS:45049087838

SN - 0169-4332

VL - 254

SP - 6112

EP - 6115

JO - Applied Surface Science

JF - Applied Surface Science

IS - 19

ER -