Interface characterization and current conduction in HfO 2 -gated MOS capacitors

H. W. Chen, F. C. Chiu, Chuan-Hsi Liu, S. Y. Chen, H. S. Huang, P. C. Juan, H. L. Hwang

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO 2 ) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (over(D, ̄) it ), energy distribution of interface traps density and near-interface oxide traps density (N NIOT ) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10 12 cm -2 eV -1 by using high-low frequency capacitance method. The maximum D it is about 7.76 × 10 12 cm -2 eV -1 located at 0.27 eV above the valence band.

Original languageEnglish
Pages (from-to)6112-6115
Number of pages4
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

Fingerprint

Capacitors
Capacitance
Hafnium
Metals
Electric potential
Valence bands
Oxides
Electrons
Temperature
Oxide semiconductors

Keywords

  • HfO
  • High-κ
  • Interface traps density
  • Near-interface oxide traps

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Chen, H. W., Chiu, F. C., Liu, C-H., Chen, S. Y., Huang, H. S., Juan, P. C., & Hwang, H. L. (2008). Interface characterization and current conduction in HfO 2 -gated MOS capacitors Applied Surface Science, 254(19), 6112-6115. https://doi.org/10.1016/j.apsusc.2008.02.191

Interface characterization and current conduction in HfO 2 -gated MOS capacitors . / Chen, H. W.; Chiu, F. C.; Liu, Chuan-Hsi; Chen, S. Y.; Huang, H. S.; Juan, P. C.; Hwang, H. L.

In: Applied Surface Science, Vol. 254, No. 19, 30.07.2008, p. 6112-6115.

Research output: Contribution to journalArticle

Chen, HW, Chiu, FC, Liu, C-H, Chen, SY, Huang, HS, Juan, PC & Hwang, HL 2008, ' Interface characterization and current conduction in HfO 2 -gated MOS capacitors ', Applied Surface Science, vol. 254, no. 19, pp. 6112-6115. https://doi.org/10.1016/j.apsusc.2008.02.191
Chen, H. W. ; Chiu, F. C. ; Liu, Chuan-Hsi ; Chen, S. Y. ; Huang, H. S. ; Juan, P. C. ; Hwang, H. L. / Interface characterization and current conduction in HfO 2 -gated MOS capacitors In: Applied Surface Science. 2008 ; Vol. 254, No. 19. pp. 6112-6115.
@article{914d958d35cd4267b73537655c7d7bd4,
title = "Interface characterization and current conduction in HfO 2 -gated MOS capacitors",
abstract = "Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO 2 ) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (over(D, ̄) it ), energy distribution of interface traps density and near-interface oxide traps density (N NIOT ) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10 12 cm -2 eV -1 by using high-low frequency capacitance method. The maximum D it is about 7.76 × 10 12 cm -2 eV -1 located at 0.27 eV above the valence band.",
keywords = "HfO, High-κ, Interface traps density, Near-interface oxide traps",
author = "Chen, {H. W.} and Chiu, {F. C.} and Chuan-Hsi Liu and Chen, {S. Y.} and Huang, {H. S.} and Juan, {P. C.} and Hwang, {H. L.}",
year = "2008",
month = "7",
day = "30",
doi = "10.1016/j.apsusc.2008.02.191",
language = "English",
volume = "254",
pages = "6112--6115",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "19",

}

TY - JOUR

T1 - Interface characterization and current conduction in HfO 2 -gated MOS capacitors

AU - Chen, H. W.

AU - Chiu, F. C.

AU - Liu, Chuan-Hsi

AU - Chen, S. Y.

AU - Huang, H. S.

AU - Juan, P. C.

AU - Hwang, H. L.

PY - 2008/7/30

Y1 - 2008/7/30

N2 - Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO 2 ) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (over(D, ̄) it ), energy distribution of interface traps density and near-interface oxide traps density (N NIOT ) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10 12 cm -2 eV -1 by using high-low frequency capacitance method. The maximum D it is about 7.76 × 10 12 cm -2 eV -1 located at 0.27 eV above the valence band.

AB - Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO 2 ) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (over(D, ̄) it ), energy distribution of interface traps density and near-interface oxide traps density (N NIOT ) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10 12 cm -2 eV -1 by using high-low frequency capacitance method. The maximum D it is about 7.76 × 10 12 cm -2 eV -1 located at 0.27 eV above the valence band.

KW - HfO

KW - High-κ

KW - Interface traps density

KW - Near-interface oxide traps

UR - http://www.scopus.com/inward/record.url?scp=45049087838&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45049087838&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.02.191

DO - 10.1016/j.apsusc.2008.02.191

M3 - Article

AN - SCOPUS:45049087838

VL - 254

SP - 6112

EP - 6115

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 19

ER -