Interface characterization and current conduction in HfO 2 -gated MOS capacitors

H. W. Chen, F. C. Chiu, C. H. Liu, S. Y. Chen, H. S. Huang, P. C. Juan, H. L. Hwang

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO 2 ) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (over(D, ̄) it ), energy distribution of interface traps density and near-interface oxide traps density (N NIOT ) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10 12 cm -2 eV -1 by using high-low frequency capacitance method. The maximum D it is about 7.76 × 10 12 cm -2 eV -1 located at 0.27 eV above the valence band.

Original languageEnglish
Pages (from-to)6112-6115
Number of pages4
JournalApplied Surface Science
Issue number19
Publication statusPublished - 2008 Jul 30


  • HfO
  • High-κ
  • Interface traps density
  • Near-interface oxide traps

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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