Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

M. W. Lee*, H. C. Hsueh, H. M. Lin, C. C. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

Original languageEnglish
Article number161309
Pages (from-to)1613091-1613094
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
Publication statusPublished - 2003 Apr

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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