Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

M. W. Lee; H. C. Hsueh; H. M. Lin; C. C. Chen

Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

M. W. Lee^*, H. C. Hsueh, H. M. Lin, C. C. Chen

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

Original language	English
Article number	161309
Pages (from-to)	1613091-1613094
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	67
Issue number	16
Publication status	Published - 2003 Apr

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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title = "Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes",

abstract = "This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.",

author = "Lee, {M. W.} and Hsueh, {H. C.} and Lin, {H. M.} and Chen, {C. C.}",

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AU - Lee, M. W.

AU - Hsueh, H. C.

AU - Lin, H. M.

AU - Chen, C. C.

PY - 2003/4

Y1 - 2003/4

N2 - This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

AB - This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

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ER -

Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

Abstract

ASJC Scopus subject areas

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