Interaction influence of S/D GeSi lattice mismatch and stress gradient of CESL on nano-scaled strained nMOSFETs

Physics & Astronomy

• n-type semiconductors 70%
• metal oxide semiconductors 57%
• field effect transistors 43%
• gradients 36%
• interactions 22%
• thin films 8%
• simulation 6%
• spacers 5%
• semiconductor devices 5%
• vehicles 5%
• resources 5%
• estimating 4%
• performance 4%
• methodology 4%
• transistors 4%
• engineering 4%
• fabrication 3%
• estimates 3%
• coefficients 3%
• predictions 2%

Engineering & Materials Science

• Lattice mismatch 100%
• MOSFET devices 65%
• Thin films 14%
• Semiconductor devices 5%
• Transistors 4%
• Fabrication 3%
• Testing 2%

Chemical Compounds

• Field Effect 55%
• Compound Mobility 42%
• Simulation 35%
• Semiconductor 14%
• Alloy 13%
• Strain 12%