Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface

Agnieszka Tomaszewska; Xiao Lan Huang; Chun Liang Lin; Kuo Wei Chang; Tsu Yi Fu

doi:10.1109/INEC.2011.5991662

Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface

Agnieszka Tomaszewska^*, Xiao Lan Huang, Chun Liang Lin, Kuo Wei Chang, Tsu Yi Fu

^*Corresponding author for this work

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Using STM, we have investigated early stages of nanostructures formation upon room temperature (RT) deposition of 0.12 ML Ni onto Ag/Ge(111)- √3×√3 surface. While RT growth mode is determined by cluster formation, annealing up to 200°C promotes cluster nucleation. Further annealing results in creation of hexagonal-shaped islands which conserve on the surface in the unchanged form even after 800°C annealing. Unusual thermal stability of these islands is explained in terms of Ni-Ge compounds formation.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991662
Publication status	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	2011/06/21 → 2011/06/24

Keywords

Ag
Ge(111)
Ni
STM
island growth

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2011.5991662

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Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface. / Tomaszewska, Agnieszka; Huang, Xiao Lan; Lin, Chun Liang et al.
4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991662 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tomaszewska, A, Huang, XL, Lin, CL, Chang, KW & Fu, TY 2011, Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991662, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 2011/06/21. https://doi.org/10.1109/INEC.2011.5991662

@inproceedings{d89bab437b07434c9fc3ea2fd839a308,

title = "Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface",

abstract = "Using STM, we have investigated early stages of nanostructures formation upon room temperature (RT) deposition of 0.12 ML Ni onto Ag/Ge(111)- √3×√3 surface. While RT growth mode is determined by cluster formation, annealing up to 200°C promotes cluster nucleation. Further annealing results in creation of hexagonal-shaped islands which conserve on the surface in the unchanged form even after 800°C annealing. Unusual thermal stability of these islands is explained in terms of Ni-Ge compounds formation.",

keywords = "Ag, Ge(111), Ni, STM, island growth",

author = "Agnieszka Tomaszewska and Huang, {Xiao Lan} and Lin, {Chun Liang} and Chang, {Kuo Wei} and Fu, {Tsu Yi}",

year = "2011",

doi = "10.1109/INEC.2011.5991662",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

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TY - GEN

T1 - Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface

AU - Tomaszewska, Agnieszka

AU - Huang, Xiao Lan

AU - Lin, Chun Liang

AU - Chang, Kuo Wei

AU - Fu, Tsu Yi

PY - 2011

Y1 - 2011

N2 - Using STM, we have investigated early stages of nanostructures formation upon room temperature (RT) deposition of 0.12 ML Ni onto Ag/Ge(111)- √3×√3 surface. While RT growth mode is determined by cluster formation, annealing up to 200°C promotes cluster nucleation. Further annealing results in creation of hexagonal-shaped islands which conserve on the surface in the unchanged form even after 800°C annealing. Unusual thermal stability of these islands is explained in terms of Ni-Ge compounds formation.

AB - Using STM, we have investigated early stages of nanostructures formation upon room temperature (RT) deposition of 0.12 ML Ni onto Ag/Ge(111)- √3×√3 surface. While RT growth mode is determined by cluster formation, annealing up to 200°C promotes cluster nucleation. Further annealing results in creation of hexagonal-shaped islands which conserve on the surface in the unchanged form even after 800°C annealing. Unusual thermal stability of these islands is explained in terms of Ni-Ge compounds formation.

KW - Ag

KW - Ge(111)

KW - Ni

KW - STM

KW - island growth

UR - http://www.scopus.com/inward/record.url?scp=80053044457&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053044457&partnerID=8YFLogxK

U2 - 10.1109/INEC.2011.5991662

DO - 10.1109/INEC.2011.5991662

M3 - Conference contribution

AN - SCOPUS:80053044457

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface

Abstract

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Keywords

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