Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface

Agnieszka Tomaszewska, Xiao Lan Huang, Chun Liang Lin, Kuo Wei Chang, Tsu Yi Fu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using STM, we have investigated early stages of nanostructures formation upon room temperature (RT) deposition of 0.12 ML Ni onto Ag/Ge(111)- √3×√3 surface. While RT growth mode is determined by cluster formation, annealing up to 200°C promotes cluster nucleation. Further annealing results in creation of hexagonal-shaped islands which conserve on the surface in the unchanged form even after 800°C annealing. Unusual thermal stability of these islands is explained in terms of Ni-Ge compounds formation.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011 Sep 26
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 2011 Jun 212011 Jun 24

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period11/6/2111/6/24

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Keywords

  • Ag
  • Ge(111)
  • Ni
  • STM
  • island growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tomaszewska, A., Huang, X. L., Lin, C. L., Chang, K. W., & Fu, T. Y. (2011). Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991662] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991662