Inhibited Degradation of Organic–Inorganic Perovskite-Based Quantum Dot Films via Rapid Annealing Temperatures

Pao Hsun Huang, Pin Jia Lai, Wen Ray Chen, Chuan Hsi Liu*, Po Wen Sze, Shui Yang Lien, Chien Jung Huang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


General hot-plate heating is used to form a crystal structure of films; however, how to achieve a homogeneous and regulated crystal formation will be a crucial challenge in the future. In this study, based on perovskite-series materials, organic methylamine lead trioxide (MAPbI3) films doped with inorganic lead iodide (CsPbI3) quantum dots (QDs) are treated using the rapid thermal annealing (RTA) process in argon gas to break the crystallization barrier. These RTA-treated perovskite quantum dot (PQD) films at various temperatures of 100–160 °C are detected using X-ray diffraction, X-ray spectroscopy, and absorbance measurements to investigate their structural and optical properties as well as their binding states. The experimental results demonstrate that the PQD film annealed at 120 °C has optimized characteristics, revealing better crystallinity and the lowest content of oxygen atoms (31.4%) and C-O-C bonding (20.1%). A too-high RTA temperature, more than 140 °C, causes severe degradation with the existence of PbI2. A proper RTA process, an alternative to normal heating and annealing, can effectively inhibit the occurrence of degradation and even usefully improve the performance of PQD films.

Original languageEnglish
Article number452
Issue number3
Publication statusPublished - 2023 Mar


  • annealing
  • ligand-assisted reprecipitation
  • perovskite
  • quantum dots

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Materials Science
  • Condensed Matter Physics
  • Inorganic Chemistry


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